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1N6626D3D

Description
Rectifier Diode, 1 Element, 1.75A, 200V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size343KB,4 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
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1N6626D3D Overview

Rectifier Diode, 1 Element, 1.75A, 200V V(RRM),

1N6626D3D Parametric

Parameter NameAttribute value
MakerTT Electronics plc
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.35 V
Maximum non-repetitive peak forward current75 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1.75 A
Maximum repetitive peak reverse voltage200 V
surface mountYES
ULTRA FAST RECOVERY
POWER RECTIFIER
1N6626D3A / 1N6626D3B
1N6626D3C / 1N6626D3D
High Reliability Screening Options Available.
High forward current surge current capability.
Switching power supplies or other applications requiring
fast switching and low forward loss.
Variants D3C & D3D with solder dip finished pads (63Sn/37Pb).
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VRWM
IO
1
IFSM
2
TJ
Tstg
TSP
Working Peak Reverse Voltage
Average Rectified Forward Current TA = 25°C
Peak Forward Current Surge
Junction Temperature Range
Storage Temperature Range
Maximum Soldering Pad Temperature for 20s
200V
1.75A
75A
-65 to +175°C
-65 to +175°C
260°C
THERMAL PROPERTIES
Symbols
R
θJSP(IN)
R
θJA(PCB)
(3)
R
θJA(PCB)
(4)
Parameters
Thermal Resistance, Junction To Solder Pads TSP = 25°C
Thermal Resistance, Junction To Ambient, On PCB
Thermal Resistance, Junction To Ambient, On PCB
Max.
40
72.5
110
Units
°C/W
°C/W
°C/W
Notes
(1) IO1 is rated at 1.75A @ TA = 25°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where
TJ(Max) does not exceed 175°C; This equates to R
θJA(PCB)
85°C/W.
(2) TA = 25°C @ IO=0A and VRWM = 0V for ten 8.3mS surges at 1 minute intervals.
(3) PCB = FR4, 0.0625 Inch (1.59mm) thick, single layer, 1.0-Oz Cu, Pad Size, (1.0” x 1.0”), (645mm x 645mm) , horizontal in still air.
(4) PCB = FR4, 0.0625 Inch (1.59mm) thick, single layer, 1.0-Oz Cu, Pad Size, (0.070” x 0.155”)‡, (1.78mm x 3.94mm) ‡, horizontal in still air.
IO1 is rated at 1.5A @ TA = 25°C for PC boards where R
θJA(PCB)
111°C/W. Derate at 10mA/°C above TA = 25°C in this case.
‡ Recommended solder pad layout dimensions for this device, as detailed within this datasheet for the D-5A device.
Semelab ltd reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing an order.
Semelab ltd
Telephone +44 (0) 1455 556565
Email:
sales@semelab-tt.com
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Website:
http://www.semelab-tt.com
Document Number 8975
Issue 3
Page 1 of 4

1N6626D3D Related Products

1N6626D3D 1N6626D3B 1N6626D3C
Description Rectifier Diode, 1 Element, 1.75A, 200V V(RRM), Rectifier Diode, 1 Phase, 1 Element, 1.75A, 200V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, DLCC3 VARIANT B, 2 PIN Rectifier Diode, 1 Element, 1.75A, 200V V(RRM),
Maker TT Electronics plc TT Electronics plc TT Electronics plc
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum non-repetitive peak forward current 75 A 75 A 75 A
Number of components 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C
Maximum output current 1.75 A 1.75 A 1.75 A
Maximum repetitive peak reverse voltage 200 V 200 V 200 V
surface mount YES YES YES
Maximum forward voltage (VF) 1.35 V - 1.35 V

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