4V Drive Pch MOSFET
RP1E050RP
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
MPT6
(Single)
Features
1) Low On-resistance.
2) High power package.
3) 4V drive.
(6)
(5)
(4)
(1)
(2)
(3)
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RP1E050RP
Taping
TR
1000
○
Inner circuit
(6)
(5)
(4)
∗2
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
Limits
30
20
5
*1
Unit
V
V
A
A
A
A
W
C
C
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗1
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
20
1.6
20
2.0
150
55
to +150
*1
*2
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)
*
Limits
62.5
Unit
C
/ W
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.07 - Rev.B
RP1E050RP
Electrical characteristics
(Ta = 25C)
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transistor admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Symbol
I
GSS
I
DSS
V
GS (th)
R
DS (on)
l Y
fs
l*
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
*
Q
gs
*
Q
gd
*
*
Min.
-
30
-
1.0
-
-
-
4
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
36
52
58
-
850
120
120
9
25
55
30
9.2
2.4
3.6
Max.
10
-
1
2.5
50
72
80
-
-
-
-
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Unit
A
V
A
V
Conditions
V
GS
=20V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=5A, V
GS
=10V
m I
D
=2.5A, V
GS
=4.5V
I
D
=2.5A, V
GS
=4.0V
I
D
=5A, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=2.5A, V
DD
15V
V
GS
=10V
R
L
=6.0
R
G
=10
I
D
=5A, V
DD
15V
V
GS
=5V R
L
=3.0
R
G
=10
Data Sheet
Drain-source breakdown voltage V
(BR)DSS
Body
diode characteristics
(Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=5A, V
GS
=0V
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©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.07- Rev.B
RP1E050RP
Electrical characteristics curves
10
8
6
4
2
V
GS
= -3.0V
0
0
0.2
0.4
0.6
0.8
1
V
GS
= -2.5V
Ta=25°C
Pulsed
DRAIN CURRENT : -I
D
[A]
10
8
6
4
2
0
0
2
4
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -3.5V
Ta=25°C
Pulsed
DRAIN CURRENT : -I
D
[A]
10
Data Sheet
V
DS
= -10V
Pulsed
DRAIN CURRENT : -I
D
[A]
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
V
GS
= -3.5V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
0.1
V
GS
= -3.0V
0.01
V
GS
= -2.5V
0.001
6
8
10
0
1
2
3
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.1 Typical Output Characteristics(
Ⅰ)
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.2 Typical Output Characteristics(
Ⅱ)
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[mΩ]
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[mΩ]
Ta=25°C
Pulsed
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -10V
1000
V
GS
= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
V
GS
= -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
100
100
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅰ)
10
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅱ)
10
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅲ)
10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[mΩ]
1000
V
GS
= -4.0V
Pulsed
10
REVERSE DRAIN CURRENT : -Is [A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
V
DS
= -10V
Pulsed
10
V
GS
=0V
Pulsed
1
100
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
0.5
1
1.5
10
0.1
1
DRAIN-CURRENT : -I
D
[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
Ⅳ)
10
0.1
0.01
0.1
1
10
0.01
DRAIN-CURRENT : -I
D
[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
SOURCE-DRAIN VOLTAGE : -V
SD
[V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
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©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.07 - Rev.B
RP1E050RP
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[mΩ]
200
1000
t
d
(off)
SWITCHING TIME : t [ns]
Ta=25°C
Pulsed
I
D
= -5.0A
Ta=25°C
V
DD
= -15V
V
GS
= -10V
R
G
=10Ω
Pulsed
10
GATE-SOURCE VOLTAGE : -V
GS
[V]
8
6
4
2
0
0
5
10
Data Sheet
150
t
f
100
100
10
t
d
(on)
1
t
r
50
I
D
= -2.5A
0
0
5
10
15
Ta=25°C
V
DD
= -15V
I
D
= -5.0A
R
G
=10Ω
Pulsed
15
20
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : -V
GS
[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -I
D
[A]
Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
CAPACITANCE : C [pF]
1000
Ta=25°C
f=1MHz
V
GS
=0V
Ciss
100
DRAIN CURRENT : -I
D
(A)
10
1
0.1
0.01
0.01
0.1
1
10
100
0.1
1
10
100
P
W
=1ms
P
W
= 10ms
Operation in this area is limited by R
DS(on)
(V
GS
=-10V)
P
W
=100us
1000
100
Crss
Coss
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
DC operation
10
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
Fig.14 Maximum Safe Operating Area
10
NORMARIZED TRANSIENT THERMAL
RESISTANCE
: r (t)
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a CERAMIC board>
0.01
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.07 - Rev.B
RP1E050RP
Measurement circuits
Pulse Width
Data Sheet
V
GS
I
D
R
L
D.U.T.
V
DS
V
GS
10%
50%
10%
90%
50%
10%
90%
R
G
V
DD
V
DS
t
d(on)
t
on
90%
t
r
t
d(off)
t
off
t
f
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
V
GS
I
D
R
L
I
G(Const.)
D.U.T.
R
G
V
DD
V
DS
Q
g
V
GS
Q
gs
Q
gd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.07- Rev.B
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