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RRL035P03

Description
4V Drive Pch MOSFET
File Size365KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

RRL035P03 Overview

4V Drive Pch MOSFET

4V Drive Pch MOSFET
RRL035P03
Structure
Silicon P-channel MOSFET
Dimensions
(Unit : mm)
TUMT6
Features
1) Low On-resistance.
2) High speed switching.
Abbreviated symbol :UF
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RRL035P03
Taping
TR
3000
Inner circuit
(6)
(5)
(4)
∗2
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
Limits
30
20
3.5
*1
Unit
V
V
A
A
A
A
W
C
C
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(1)
(2)
0.2Max.
∗1
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
14
0.8
14
1
150
55
to +150
*1
*2
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth
(ch-a)
*
Limits
125
Unit
C
/ W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A
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