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2SD1875G-Q-T9N-B

Description
Small Signal Bipolar Transistor, 2A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size96KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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2SD1875G-Q-T9N-B Overview

Small Signal Bipolar Transistor, 2A I(C), NPN

2SD1875G-Q-T9N-B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
Maximum collector current (IC)2 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz

2SD1875G-Q-T9N-B Preview

UNISONIC TECHNOLOGIES CO., LTD
2SD1857
POWER TRANSISTOR
FEATURES
* High breakdown voltage.(BV
CEO
=120V)
* Low collector output capacitance.(Typ.20pF at V
CB
=10V)
* High transition frequency.(f
T
=80MHz)
NPN EPITAXIAL SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SD1875L-x-T92-B
2SD1875G-x-T92-B
TO-92
2SD1875L-x-T92-K
2SD1875G-x-T92-K
TO-92
2SD1875L-x- T92-R
2SD1875G-x- T92-R
TO-92
2SD1875L-x-T9N-B
2SD1875G-x-T9N-B
TO-92NL
2SD1875L-x-T9N-K
2SD1875G-x-T9N-K
TO-92NL
Note: Pin Assignment E: EMITTER C: COLLECTOR B: BASE
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., LTD
1 of 2
QW-R201-057,D
2SD1857
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector power dissipation
Collector current
Collector current
SYMBOL
V
CBO
V
CEO
V
EBO
P
C
I
C
I
CP
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
120
120
5
1
2
3
UNIT
V
V
V
W
A
A
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-40 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-base breakdown voltage
BV
CBO
I
C
=50µA
Collector-emitter breakdown voltage
BV
CEO
I
C
=1mA
Emitter-base breakdown voltage
BV
EBO
I
E
=50µA
Collector cut-off current
I
CBO
V
CB
=100V
Emitter cut-off current
I
EBO
V
EB
=4V
DC current transfer ratio
h
FE
V
CE
=5V, I
C
=0.1A
Collector-emitter saturation voltage
V
CE(sat)
I
C
=/I
B
=1A/0.1A (Note)
Transition frequency
f
T
V
CE
=5V, I
E
= -0.1A, f=30MHz.
Output capacitance
C
ob
V
CB
=10V, I
E
=0A, f=1MHz (Note)
Note: Measured using pulse current.
MIN
120
120
5
TYP
MAX
UNIT
V
V
V
µA
µA
V
MHz
pF
82
80
20
1
1
390
0.4
CLASSIFICATION OF h
FE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 2
QW-R201-057,D

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