UNISONIC TECHNOLOGIES CO., LTD
3N80
3.0 Amps, 800Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
3N80
provide excellent R
DS(ON)
, low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
FEATURES
* R
DS(ON)
< 4.2Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 11 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
TO-251S4
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
3N80L-TA3-T
3N80G-TA3-T
3N80L-TF3-T
3N80G-TF3-T
3N80L-TF1-T
3N80G-TF1-T
3N80L-TF2-T
3N80G-TF2-T
3N80L-TM3-T
3N80G-TM3-T
3N80L-TMS4-R
3N80G-TMS4-R
3N80L-TN3-R
3N80G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-283.J
3N80
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-283.J
3N80
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V
GS
=0V)
V
DSS
800
V
Drain-Gate Voltage (R
G
=20kΩ)
V
DGR
800
V
Gate-Source Voltage
V
GSS
±30
V
Gate-Source Breakdown Voltage (I
GS
=±1mA)
BV
GSO
30 (MIN)
V
Insulation Withstand Voltage (DC) TO-220F/ TO-220F1
V
ISO
2500
V
Avalanche Current (Note 2)
I
AR
3
A
Continuous Drain Current
I
D
3
A
Pulsed Drain Current
I
DM
10
A
Single Pulse Avalanche Energy (Note 3)
E
AS
170
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
70
TO-220F/ TO-220F1
25
Power Dissipation
P
D
W
TO-220F2
TO-251/TO-251S4
50
TO-252
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
.
3. Starting T
J
=25 °C, I
D
=I
AR
, V
DD
=50V
4. I
SD
≦2.5A,
di/dt≦200A/μs, V
DD
≦BV
DSS
, T
J
≦T
J(MAX)
.
THERMAL DATA
PARAMETER
TO-220TO-220F
TO-220F1/TO-220F2
TO-251/TO-251S4
TO-252
TO-220
TO-220F/ TO-220F1
TO-220F2
TO-251/TO-251S4
TO-252
SYMBOL
θ
JA
110
1.78
θ
JC
5
2.5
°C/W
RATING
62.5
°C/W
UNIT
Junction to Ambient
Junction to Case
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QW-R502-283.J
3N80
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250μA
800
V
Drain-Source Leakage Current
I
DSS
V
DS
=800V, V
GS
=0V
1
μA
Gate-Source Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
±10
μA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
3 3.75 4.5
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=1.5A
3.2 4.2
Ω
Forward Transconductance (Note 1)
g
FS
V
DS
=15V, I
D
=1.5A
2.1
S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
485
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
57
pF
11
pF
Reverse Transfer Capacitance
C
RSS
Equivalent Output Capacitance (Note 2)
C
OSS(EQ)
V
GS
=0V, V
DS
=0V~640V
22
pF
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
19
nC
V
DD
=640V, I
D
=3A, V
GS
=10V
Gate-Source Charge
Q
GS
3.2
nC
10.8
nC
Gate-Drain Charge
Q
DD
Turn-On Delay Time
t
D(ON)
17
ns
Turn-On Rise Time
t
R
27
ns
V
DD
=400V, I
D
=3 A,
R
G
=4.7Ω, V
GS
=10V
Turn-Off Delay Time
t
D(OFF)
36
ns
Turn-Off Fall Time
t
F
40
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Source-Drain Current
I
SD
2.5
A
Source-Drain Current (Pulsed)
I
SDM
10
A
I
SD
=3A, di/dt=100A/μs,
8.4
A
Reverse Recovery Current
I
RRM
V
DD
=50V, T
J
=25°C
Diode Forward Voltage(Note 1)
V
SD
I
SD
=3A ,V
GS
=0V
1.6
V
Body Diode Reverse Recovery Time
t
rr
384
ns
Body Diode Reverse Recovery Charge
Q
RR
1600
nC
Note: 1. Pulse width = 300μs, Duty cycle≦1.5%
Note:
2. C
OSS(EQ)
is defined as constant equivalent capacitance giving the same charging time as C
OSS
when V
DS
increases from 0to 80% V
DSS
.
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www.unisonic.com.tw
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QW-R502-283.J
3N80
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
I
SD
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-283.J
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