UNISONIC TECHNOLOGIES CO., LTD
BC556/557/558
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
* High Voltage: BC556, V
CEO
=-65V
1
PNP SILICON TRANSISTOR
TO-92
ORDERING INFORMATION
Normal
BC556-x-T92-B
BC556-x-T92-K
BC557-x-T92-B
BC557-x-T92-K
BC558-x-T92-B
BC558-x-T92-K
Ordering Number
Lead Free Plating
BC556L-x-T92-B
BC556L-x-T92-K
BC557L-x-T92-B
BC557L-x-T92-K
BC558L-x-T92-B
BC558L-x-T92-K
Halogen Free
BC556G-x-T92-B
BC556G-x-T92-K
BC557G-x-T92-B
BC557G-x-T92-K
BC558G-x-T92-B
BC558G-x-T92-K
Package
TO-92
TO-92
TO-92
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
Packing
Tape Box
Bulk
Tape Box
Bulk
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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BC556/557/558
PARAMETER
SYMBOL
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25°C, unless otherwise specified)
RATINGS
UNIT
BC556
-80
V
Collector-Base Voltage
V
CBO
BC557
-50
V
BC558
-30
V
BC556
-65
V
Collector-Emitter Voltage
V
CEO
BC557
-45
V
BC558
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current (DC)
I
C
-100
mA
Power Collector Dissipation
625
mW
P
C
Linear Derating Factor above (Ta=25°C)
5
mW/°C
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
Jc
RATINGS
200
83.3
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
BC556
Collector-Emitter Breakdown Voltage BC557
BC558
BC556
Collector-Base Breakdown Voltage
BC557
BC558
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
BV
CEO
TEST CONDITIONS
I
C
=-10mA, I
B
=0
TYP MAX UNIT
V
V
V
V
V
V
V
-15
nA
110
800
-90 -300 mV
-250 -650 mV
-700
mV
-900
mV
-600 -660 -750 mV
-800 mV
150
MHz
6
pF
2
10
dB
MIN
-65
-45
-30
-80
-50
-30
-5.0
BV
CBO
BV
EBO
I
CBO
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
OB
NF
I
C
=-100μA
I
E
=-10μA, I
C
=0
I
E
= 0, V
CB
=-30 V
V
CE
=-5V, I
C
=2mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA
I
C
=-10mA, I
B
=-0.5mA
I
C
=-100mA, I
B
=-5mA
V
CE
=-5 V,I
C
=-2mA
V
CE
=-5 V,I
C
=-10mA
V
CE
=-5V, I
C
=-10mA, f =10MHz
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-5V, I
C
=-200μA
f=1KHz, R
G
=2KΩ
CLASSIFICATION OF h
FE
RANK
h
FE
A
110 - 220
B
200 - 450
C
420 - 800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-051.C
BC556/557/558
Capacitance,C (pF)
Saturation Voltage, V
BE(SAT)
, V
CE(SAT)
Collector Current, I
C
(mA)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Collector Current, I
C
(mA)
DC Current Gain, h
FE
www.unisonic.com.tw
Current Gain-Bandwidth Product,f
T
(MHz)
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PNP SILICON TRANSISTOR
QW-R201-051.C
BC556/557/558
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-051.C
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