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HM5118160BLJI-6

Description
Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
Categorystorage    storage   
File Size328KB,29 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HM5118160BLJI-6 Overview

Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

HM5118160BLJI-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSOJ
package instructionSOJ, SOJ42,.44
Contacts42
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-J42
JESD-609 codee0
length27.06 mm
memory density16777216 bi
Memory IC TypeFAST PAGE DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals42
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ42,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height3.76 mm
self refreshYES
Maximum standby current0.00015 A
Maximum slew rate0.17 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1
HM5118160BI Series
1048576-word
×
16-bit Dynamic Random Access Memory
ADE-203-580A (Z)
Rev. 1.0
May. 20, 1996
Description
The Hitachi HM5118160BI is a CMOS dynamic RAM organized as 1,048,576-word
×
16-bit. It employs
the most advanced CMOS technology for high performance and low power. The HM5118160BI offers
Fast Page Mode as a high speed access mode.
Features
Single 5 V (±10%)
High speed
Access time: 60 ns/70 ns/80 ns (max)
Low power dissipation
Active mode: 935 mW/825 mW/715 mW (max)
Standby mode : 11 mW (max)
: 0.83 mW (max) (L-version)
Fast page mode capability
Long refresh period
1024 refresh cycles : 16 ms
: 128 ms (L-version)
4 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Self refresh (L-version)
2CAS-byte control
Battery backup operation (L-version)
This specification is fully compatible with the 16-Mbit DRAM specifications from TEXAS
INSTRUMENTS.

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