KBP005M thru KBP10M, 3N246 thru 3N252
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Single-Phase
Bridge Rectifiers
Case Style KBPM
Rev. Voltage
50 to 1000V
Forward Current
1.5A
Features
0.600 (15.24)
0.125 x 45
o
(3.2)
0.560 (14.22)
0.460 (11.68)
0.420 (10.67)
0.500 (12.70)
0.460 (11.68)
Dimensions in
inches and
(millimeters)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• This series is UL listed under Recognized Component
Index, file number E54214
• Glass passivated chip junctions
• High surge current capability
• Ideal for printed circuit boards
• High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
60
(15.2)
MIN.
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.50 (12.7) Min.
Mechanical Data
Case:
Molded plastic body over passivated junctions
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Mounting Position:
Any
Weight:
0.06 oz., 1.7 g
Packaging codes/options:
1/600 EA. per Bulk Tray Stack
Ratings at 25°C ambient temperature unless otherwise specified.
0.034 (0.86)
0.028 (0.76)
DIA.
0.200 (5.08)
0.180 (4.57)
0.105 (2.67)
0.085 (2.16)
Polarity shown on front side of case: positive lead by beveled corner
Maximum Ratings & Thermal Characteristics
Parameter
* Maximum repetitive peak reverse voltage
* Maximum RMS voltage
* Maximum DC blocking voltage
Max. average forward output rectified current at T
A
= 40°C
* Peak forward surge current single half sine-wave
superimposed on rated load (JEDEC Method) T
J
=150°C
Rating for fusing (t < 8.3ms)
Typical thermal resistance per leg
(1)
* Operating junction and storage temperature range
KBP
Symb. 005M
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
R
θJA
R
θJL
T
J
, T
STG
50
35
50
KBP
01M
KBP
02M
KBP
04M
KBP
06M
KBP
08M
KBP
10M
Unit
V
V
V
A
A
A sec
°C/W
°C
2
3N246 3N247 3N248 3N249 3N250 3N251 3N252
100
70
100
200
140
200
400
280
400
1.5
50
30
10
40
13
–55 to +150
600
420
600
800
560
800
1000
700
1000
Electrical Characteristics
* Max. instantaneous at
forward voltage drop at
* Maximum DC reverse current
at rated DC blocking voltage per leg
Ratings at 25°C ambient temperature unless otherwise specified.
1.0A per leg
1.57A per leg
T
A
= 25°C
T
A
= 125°C
V
F
I
R
C
J
1.0
1.3
5.0
500
15
V
µA
pF
Typical junction capacitance per leg at 4.0V, 1MHz
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x12mm) copper pads
* JEDEC registered values
Document Number 88531
11-Feb-02
www.vishay.com
1
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Derating Curve Output
Rectified Current
Bridge Output Full Wave Rectified Current,
Average Amperes
1.6
60
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Single Half Sine-Wave
(JEDEC Method)
T
A
= 25°C
40
30
T
J
= 150°C
20
Peak Forward Surge Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Capacitive Load
Ipk/I
AV
= 5.0
Ipk/I
AV
= 10
Ipk/I
AV
= 20
(per leg)
20
40
60
80
60H
Z
Resistive or
Inductive Load
P.C.B. Mounted with
0.47 x 0.47" (12 x 12mm)
Copper pads
50
10
1.0 Cycle
0
100
120
140 150
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60H
Z
Fig. 3 – Typical Forward
Characteristics Per Leg
20
10
Fig. 4 – Typical Reverse Leakage
Characteristics Per Leg
Instantaneous Reverse Current (µA)
T
J
= 125°C
T
J
= 100°C
Instantaneous Forward Current (A)
10
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
1
1
0.1
0.1
T
J
= 25°C
0.01
0
20
40
60
80
100
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
Per Leg
100
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
Junction Capacitance (pF)
10
1
0.1
1
10
100
Reverse Voltage (V)
www.vishay.com
2
Document Number 88531
11-Feb-02
RF/Wirelessly
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