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IRFH5004TRPBF

Description
28 A, 40 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size235KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRFH5004TRPBF Overview

28 A, 40 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET

IRFH5004TRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeQFN
package instructionSMALL OUTLINE, R-PDSO-N5
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)340 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)100 A
Maximum drain current (ID)28 A
Maximum drain-source on-resistance0.0026 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-N5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD -97450
IRFH5004PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
40
2.6
73
1.2
100
V
mΩ
nC
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
h
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Benefits
Features and Benefits
Features
Low R
DSon
(≤ 2.6mΩ)
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5004TRPBF
IRFH5004TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
1000
Tape and Reel
Note
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
40
±20
28
23
100
100
400
3.6
250
0.029
-55 to + 150
Units
V
g
g
c
h
h
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
Notes

through
†
are on page 8
www.irf.com
1
02/08/2010

IRFH5004TRPBF Related Products

IRFH5004TRPBF IRFH5004TR2PBF
Description 28 A, 40 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 40 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Parts packaging code QFN QFN
package instruction SMALL OUTLINE, R-PDSO-N5 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Contacts 8 8
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 340 mJ 340 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 40 V 40 V
Maximum drain current (Abs) (ID) 100 A 100 A
Maximum drain current (ID) 28 A 28 A
Maximum drain-source on-resistance 0.0026 Ω 0.0026 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-N5 R-PDSO-N5
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 5 5
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 250 W 250 W
Maximum pulsed drain current (IDM) 400 A 400 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN Matte Tin (Sn)
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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