Preliminary
Datasheet
RJE0609JPD
Silicon P Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
REJ03G1908-0100
Rev.1.00
Apr 01, 2010
Features
Logic level operation (–6 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance 100 m Max (V
GS
= –10 V)
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
G
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
1
Current
Limitation
Circuit
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Gate to source voltage
V
GSS
Drain current
I
D Note3
Body-drain diode reverse drain current
I
DR
Note 2
Avalanche current
I
AP
Avalanche energy
E
AR Note 2
Channel dissipation
Pch
Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg
50
3. It provides by the current limitation lower bound value.
Ratings
–60
–16
2.5
–4
–4
–4
68
30
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
Page 1 of 6
RJE0609JPD
Preliminary
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 4. Pulse test
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
Tsd
Vop
I
D limt
Min
–3.5
—
—
—
—
—
—
—
–3.5
–4
Typ
—
—
—
—
—
–0.8
–0.35
175
—
—
Max
—
–1.2
–100
–50
–1
—
—
—
–12
—
Unit
V
V
A
A
A
mA
mA
C
V
A
Test Conditions
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Vi = –1.2 V, V
DS
= 0
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Channel temperature
(dv/dt V
GS
500 V/ms)
V
GS
= –12 V, V
DS
= –10 V
Note 4
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
I
D1
I
D2
I
D3
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(OP)1
I
GS(OP)2
I
DSS
V
GS(off)
|y
fs
|
R
DS(on)
R
DS(on)
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
t
os1
Min
—
—
–4
–60
–16
2.5
—
—
—
—
—
—
—
–2.2
2
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
–0.8
–0.35
—
—
4.3
102
79
290
2.97
2.58
1.55
1.05
0.84
81
5.7
Max
–4
–10
—
—
—
—
–100
–50
–1
100
—
—
–10
–3.4
—
170
100
—
—
—
—
—
—
—
—
Unit
A
mA
A
V
V
V
A
A
A
A
mA
mA
A
V
S
m
m
pF
s
s
s
s
V
ns
ms
Test Conditions
V
GS
= –3.5 V, V
DS
= –10 V
V
GS
= –1.2 V, V
DS
= –10 V
V
GS
= –12 V, V
DS
= –10 V
Note 5
I
D
= –10 mA, V
GS
= 0
I
G
= –800
A,
V
DS
= 0
I
G
= 100
A,
V
DS
= 0
V
GS
= –8 V, V
DS
= 0
V
GS
= –3.5 V, V
DS
= 0
V
GS
= –1.2 V, V
DS
= 0
V
GS
= 2.4 V, V
DS
= 0
V
GS
= –8 V, V
DS
= 0
V
GS
= –3.5 V, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –2 A, V
DS
= –10 V
Note 5
I
D
= –2 A, V
GS
= –6 V
Note 5
I
D
= –2 A, V
GS
= –10 V
Note 5
V
DS
= –10 V, V
GS
= 0, f = 1MHz
V
GS
= –10 V, I
D
= –2 A,
R
L
= 15
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward
voltage
Body-drain diode reverse
recovery time
Over load shut down
Note 6
operation time
I
F
= –4 A, V
GS
= 0
I
F
= –4 A, V
GS
= 0
di
F
/dt = 50 A/s
V
GS
= –6 V, V
DD
= –16 V
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
Page 2 of 6
RJE0609JPD
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
−100
Ta = 25°C
Maximum Safe Operation Area
Channel Dissipation Pch (W)
60
Drain Current I
D
(A)
Thermal shut down operation area
−10
1
s
m
40
−1
PW = 10 ms
DC Operation
(Tc = 25°C)
20
Operation
in this area
is limited R
DS(on)
0
0
50
100
150
200
−0.1
−0.01
−0.1
−1
−10
−100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
−10
V
−4
−7
V
−6
V
−5.5
V
−5
V
−4.5
V
−4
V
−4
Pulse Test
Typical Transfer Characteristics
V
DS
=
−10
V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
−3
−3
−2
−2
150°C
−1
−1
25°C
0
V
GS
= 0 V
0
−2
−4
−6
−8
−10
Tc =
−40°C
0
0
−2
−4
−6
−8
−10
Drain to Source Voltage V
DS
(V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
−2000
−1600
−1200
−800
−400
−0.5
A
0
0
−2
−4
−6
−8
−10
−1
A
I
D
=
−2
A
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
Pulse Test
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
100
−6
V
V
GS
=
−10
V
10
1
−0.1
−1
−10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
Page 3 of 6
RJE0609JPD
Static Drain to Source On State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
200
Pulse Test
I
D
=
−0.5
A
−1
A
−2
A
−6
V
I
D
=
−0.5
A
−1
A
−2
A
75 100 125 150
100
Preliminary
Forward Transfer Admittance vs.
Drain Current
V
DS
=
−10
V
Pulse Test
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
150
10
Tc =
−40°C
25°C
1
150°C
100
V
GS
=
−10
V
50
−50 −25
0
25
50
0.1
−0.1
−1
−10
Case Temperature Tc (°C)
Drain Current I
D
(A)
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1000
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
Switching Characteristics
Switching Time t (μs)
td(on)
tr
td(off)
1
tf
100
10
−0.1
−0.3
−1
0.1
−0.1
V
GS
=
−10
V, V
DD
=
−30
V
PW = 300
μs,
duty
≤
1 %
−1
−10
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
−5
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
Reverse Drain Current I
DR
(A)
Capacitance C (pF)
−4
−3
−5
V
−2
−1
−10
V
Pulse Test
0
−0.4
−0.8
−1.2
−1.6
−2.0
V
GS
= 0 V, 5 V, 10 V
Coss
100
V
GS
= 0
f = 1 MHz
10
0
−
10
−
20
−
30
−
40
−
50
−
60
Source to Drain Voltage V
SD
(V)
Drain to Source Voltage V
DS
(V)
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
Page 4 of 6
RJE0609JPD
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Gate to Source Voltage V
GS
(V)
−16
−14
−12
−10
−8
−6
−4
−2
0
1
10
100
V
DD
=
−16
V
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
200
180
160
140
I
D
=
−1
A
dv / dt
V
GS
≥
500 V/ ms
0
−2
−4
−6
−8
−10
120
100
Shutdown Time of Load-Short Test Pw (ms)
Normalized Transient Thermal Impedance
γs
(t)
Gate to Source Voltage V
GS
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
1
0.0
1
o
sh
lse
θch
- c(t) =
γs
(t)
• θch
- c
θch
- c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
u
tp
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
V
DD
= –30 V
Vout
td(on)
Vout
Monitor
Vin
10%
90%
90%
90%
Waveform
Vin
–10 V
50
Ω
10%
tr
td(off)
10%
tf
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
Page 5 of 6
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