EEWORLDEEWORLDEEWORLD

Part Number

Search

RJK0395DPA-00-J53

Description
30 A, 30 V, 0.0106 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size88KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

RJK0395DPA-00-J53 Overview

30 A, 30 V, 0.0106 ohm, N-CHANNEL, Si, POWER, MOSFET

RJK0395DPA-00-J53 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instructionSMALL OUTLINE, R-XDSO-N5
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.0106 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XDSO-N5
JESD-609 codee4
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formNO LEAD
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Preliminary
Datasheet
RJK0395DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 5.9 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
REJ03G1786-0210
Rev.2.10
May 12, 2010
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Ratings
30
±20
30
120
30
12
14.4
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1786-0210 Rev.2.10
May 12, 2010
Page 1 of 6

RJK0395DPA-00-J53 Related Products

RJK0395DPA-00-J53 RJK0395DPA_10
Description 30 A, 30 V, 0.0106 ohm, N-CHANNEL, Si, POWER, MOSFET 30 A, 30 V, 0.0106 ohm, N-CHANNEL, Si, POWER, MOSFET
Shell connection DRAIN DRAIN
Number of components 1 1
Number of terminals 5 5
surface mount YES Yes
Terminal form NO LEAD NO
Terminal location DUAL pair
transistor applications SWITCHING switch
Transistor component materials SILICON silicon
Ask a basic question: What do these IO states mean?
From the 2410 data sheet I/O State: @BUS REQ: Hi-z, P, –/–, I, O, –/–/–, – I/O State: @PWR-off: O(L)/–, O(L)/–/–, –/Hi-z/– I/O State: @nRESET: AI, AO I/O Type: t8 s3o d3o s3i d1c us s3o What do these ...
gga Embedded System
Altium Designer 19.1.6, Reports BOM does not generate the BOM table, and AD19 will be stuck. What is the reason?
[i=s]This post was last edited by oyhprince on 2021-3-27 17:55[/i]Software: Altium Designer, Version 19.1.6 Problem: Whether it is the schematic or PCB interface, Reports Bill of Materials, the AD19 s...
oyhprince PCB Design
TM4C123G program download and reset disappear
I am new to m4. I used ccs to burn in a project that I built myself and it works, but once I reset the program it disappears. Can you please help me?...
小明君 Microcontroller MCU
I am confused about how the audio driver handles sampling rate???
Take iis + audio codec as an example: in linux, after the player passes the audio sampling rate to the driver, the driver will be responsible for adjusting the iis clock and the internal frequency div...
jianning Embedded System
Problems with assert in vhdl
In this process, assert(v2=v1, there is no out of range??? PROCEDURE comp ( a, r : IN REAL; m : IN INTEGER ; v1, v2: OUT REAL) IS VARIABLE cnt : INTEGER ; BEGIN v1 := 1.6 * a ; -- Assign initial value...
stycx Embedded System
Phase difference measurement and virtual phase difference meter - related information
Phase difference measurement and virtual phase difference meter - related information...
安_然 Test/Measurement

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 13  2607  2504  440  1642  1  53  51  9  34 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号