25AA1024
1 Mbit SPI Bus Serial EEPROM
Device Selection Table
Part Number
25AA1024
V
CC
Range
1.8-5.5V
Page Size
256 Byte
Temp. Ranges
I
Packages
P, SM, MF
Features:
• 20 MHz max. Clock Speed
• Byte and Page-level Write Operations:
- 256 byte page
- 6 ms max. write cycle time
- No page or sector erase required
• Low-Power CMOS Technology:
- Max. Write current: 5 mA at 5.5V, 20 MHz
- Read current: 7 mA at 5.5V, 20 MHz
- Standby current: 1A at 2.5V
(Deep power-down)
• Electronic Signature for Device ID
• Self-Timed Erase and Write Cycles:
- Page Erase (6 ms max.)
- Sector Erase (10 ms max.)
- Chip Erase (10 ms max.)
• Sector Write Protection (32K byte/sector):
- Protect none, 1/4, 1/2 or all of array
• Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• High Reliability:
- Endurance: 1M erase/write cycles
- Data Retention: >200 years
- ESD Protection: 4000V
• Temperature Ranges Supported:
- Industrial (I): -40°C to +85°C
• Pb-Free and RoHS Compliant
Description:
The Microchip Technology Inc. 25AA1024 is a 1024
Kbit serial EEPROM memory with byte-level and page-
level serial EEPROM functions. It also features Page,
Sector and Chip erase functions typically associated
with Flash-based products. These functions are not
required for byte or page write operations. The memory
is accessed via a simple Serial Peripheral Interface
(SPI) compatible serial bus. The bus signals required
are a clock input (SCK) plus separate data in (SI) and
data out (SO) lines. Access to the device is controlled
by a Chip Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts.
The 25AA1024 is available in standard packages
including 8-lead PDIP and SOIJ, and advanced 8-lead
DFN package. All devices are Pb-free.
Package Types (not to scale)
DFN
25AA1024
CS 1
SO 2
WP 3
V
SS
4
(MF)
8
7
6
5
V
CC
HOLD
SCK
SI
PDIP/SOIJ
(P, SM)
25AA1024
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
Pin Function Table
Name
CS
SO
WP
V
SS
SI
SCK
HOLD
V
CC
Function
Chip Select Input
Serial Data Output
Write-Protect
Ground
Serial Data Input
Serial Clock Input
Hold Input
Supply Voltage
2010 Microchip Technology Inc.
DS21836H-page 1
25AA1024
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V
SS
......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
†
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I)*:
T
A
= 0°C to +85°C
Industrial (I):
T
A
= -40°C to +85°C
* Limited industrial temp range.
Min.
.7 V
CC
-0.3
-0.3
—
—
V
CC
-0.2
—
—
—
Max.
V
CC
+1
0.3 V
CC
0.2 V
CC
0.4
0.2
—
±1
±1
7
Units
V
V
V
V
V
V
A
A
pF
V
CC
2.7V
V
CC
< 2.7V
I
OL
= 2.1 mA
I
OL
= 1.0 mA, V
CC
< 2.5V
I
OH
= -400
A
CS = V
CC
, V
IN
= V
SS TO
V
CC
CS = V
CC
, V
OUT
= V
SS TO
V
CC
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
V
CC
= 5.5V; F
CLK
= 20.0 MHz;
SO = Open
V
CC
= 2.5V; F
CLK
= 10.0 MHz;
SO = Open
V
CC
= 5.5V
V
CC
= 2.5V
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, 85°C
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
, 85°C
V
CC
= 1.8V to 5.5V
V
CC
= 2.0V to 5.5V
DC CHARACTERISTICS
Param.
No.
D001
D002
D003
D004
D005
D006
D007
D008
D009
Sym.
V
IH1
V
IL1
V
IL2
V
OL
V
OL
V
OH
I
LI
I
LO
C
INT
Characteristic
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal capacitance
(all inputs and
outputs)
Test Conditions
D010
I
CC
Read
Operating current
—
—
10
5
mA
mA
mA
mA
A
A
D011
D012
D13
Note:
I
CC
Write
I
CCS
I
CCSPD
Standby current
Deep power-down
current
—
—
—
—
7
5
12
1
This parameter is periodically sampled and not 100% tested.
DS21836H-page 2
2010 Microchip Technology Inc.
25AA1024
TABLE 1-2:
AC CHARACTERISTICS (CONTINUED)
Industrial (I)*:
T
A
= 0°C to +85°C
Industrial (I):
T
A
= -40°C to +85°C
*Limited industrial temp range.
Min.
—
—
—
Max.
25
50
250
Units
ns
ns
ns
V
CC
= 1.8V to 5.5V
V
CC
= 2.0V to 5.5V
AC CHARACTERISTICS
Param.
No.
15
Sym.
T
DIS
Characteristic
Output disable time
Conditions
4.5
V
CC
5.5
2.5
V
CC
5.5
1.8
V
CC
<2.5 at 0°C to +85°C
2.0
V
CC
<2.5 at -40°C to +85°C
(Note 1)
4.5
V
CC
5.5
2.5
V
CC
5.5
1.8
V
CC
<2.5 at 0°C to +85°C
2.0
V
CC
<2.5 at -40°C to +85°C
4.5
V
CC
5.5
2.5
V
CC
5.5
1.8
V
CC
<2.5 at 0°C to +85°C
2.0
V
CC
<2.5 at -40°C to +85°C
4.5
V
CC
5.5
2.5
V
CC
4.5
1.8
V
CC
<2.5 at 0°C to +85°C
2.0
V
CC
<2.5 at -40°C to +85°C
(Note 1)
4.5
V
CC
5.5
2.5
V
CC
4.5
1.8
V
CC
<2.5 at 0°C to +85°C
2.0
V
CC
<2.5 at -40°C to +85°C
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
Byte or Page mode and Page
Erase
16
T
HS
HOLD setup time
10
20
100
10
20
100
15
30
150
—
—
—
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
17
T
HH
HOLD hold time
18
T
HZ
HOLD low to output
High-Z
19
T
HV
HOLD high to output valid
15
30
150
—
—
—
—
—
1M
—
—
—
100
100
10
10
6
—
ns
ns
ns
s
s
ms
ms
ms
20
21
22
23
24
25
T
REL
T
PD
T
CE
T
SE
T
WC
—
CS High to Standby mode
CS High to Deep power-
down
Chip erase cycle time
Sector erase cycle time
Internal write cycle time
Endurance
E/W Page mode, 25°C, 5.5V
(Note 2)
Cycles
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but established by characterization and qualification. For endurance
estimates in a specific application, please consult the Total Endurance™ Model which can be obtained
from Microchip’s web site at www.microchip.com.
3:
Includes T
HI
time.
DS21836H-page 4
2010 Microchip Technology Inc.
MCU
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