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2MBI1200U4G-170

Description
Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
CategoryDiscrete semiconductor    The transistor   
File Size481KB,6 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric View All

2MBI1200U4G-170 Overview

Insulated Gate Bipolar Transistor, 1600A I(C), 1700V V(BR)CES, N-Channel, MODULE-10

2MBI1200U4G-170 Parametric

Parameter NameAttribute value
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X10
Contacts10
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)1600 A
Collector-emitter maximum voltage1700 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X10
Number of components2
Number of terminals10
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)170 ns
Nominal on time (ton)435 ns
Base Number Matches1
2MBI1200U4G-170
IGBT MODULE (U series)
1700V / 1200A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Collector current
Icp
Conditions
Maximum ratings
1700
±20
1600
1200
3200
2400
1200
2400
6250
150
-40 to +125
3400
5.75
10
2.5
Units
V
V
Maximum Ratings and Characteristics
Continuous
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
V
iso
AC : 1min.
Mounting
Screw torque (*2)
Main Terminals
Sense Terminals
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(main terminal)
V
CE (sat)
(chip)
Cies
ton
tr
toff
tf
V
F
(main terminal)
V
F
(chip)
trr
R lead
Conditions
V
GE
= 0V, V
CE
= 1700V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 1200mA
Characteristics
min.
typ.
max.
-
-
1.0
-
-
1600
5.5
6.5
7.5
-
2.57
2.76
-
2.97
-
-
2.25
2.40
-
2.65
-
-
112
-
-
3.10
-
-
1.25
-
-
1.45
-
-
0.25
-
-
2.12
2.51
-
2.32
-
-
1.80
2.15
-
2.00
-
-
0.45
-
-
0.27
-
Units
mA
nA
V
V
nF
µs
Tj=25°C
Tj=125°C
V
GE
= 15V
I
C
= 1200A
Tj=25°C
Tj=125°C
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 900V, I
C
= 1200A,
V
GE
= ±15V, Tj = 125°C,
R
gon
= 4.7Ω, R
goff
= 1.2Ω
V
GE
= 0V
I
F
= 1200A
I
F
= 1200A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Note *3: Biggest internal terminal resistance among arm.
V
µs
mΩ
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min.
typ.
max.
-
-
0.020
-
-
0.033
-
0.006
-
Units
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1

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