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RB425D_1

Description
Shottky barrier diode
File Size184KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

RB425D_1 Overview

Shottky barrier diode

RB425D
Diodes
Shottky barrier diode
RB425D
Application
Low current rectification
Dimensions
(Unit : mm)
Lead size figure
(Unit : mm)
Features
1) Small mold type. (SMD3)
2) Low I
R
3) High reliability.
Each lead has same dimension
Structure
Silicon epitaxial planar
Structure
Taping dimensions
(Unit : mm)
Absolute maximum ratings
(Ta=25 C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current *1
Forward current surge peak 60Hz 1cyc *1
Junction temperature
Storage temperature
(*1)Rating of per diode
Electrical characteristics
(Ta=25 C)
Parameter
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
40
40
100
1
125
-40 to +125
Unit
V
V
mA
A
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V
F
1
V
F
2
I
R
1
Ct1
Min.
-
-
-
-
Typ.
-
-
-
6
Max.
0.55
0.34
30
-
Unit
V
V
μA
pF
Conditions
I
F
=100mA
I
F
=10mA
V
R
=10V
V
R
=10V , f=1MHz
Rev.B
1/3

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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