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EFM307B

Description
3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size208KB,5 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
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EFM307B Overview

3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA

EFM307B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron Semiconductor
Parts packaging codeDO-214AA
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW LEKAGE CURRENT, METALLURGICALLY BONDED
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Amperes
FEATURES
*
*
*
*
*
*
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
EFM301B
THRU
EFM307B
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.098 gram
DO-214AA
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.083 (2.11)
0.077 (1.96)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0.004 (0.102)
0.220 (5.59)
0.205 (5.21)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(@ T
A
=25
O
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 55
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
50
-55 to + 150
EFM301B EFM302B EFM303B EFM304B EFM305B EFM306B EFM307B
50
35
50
100
70
100
150
105
150
200
140
200
3.0
125
30
300
210
300
400
280
400
600
420
600
UNITS
Volts
Volts
Volts
Amps
Amps
pF
0
C
ELECTRICAL CHARACTERISTICS
(@T
A
=25
O
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
NOTES :
@T
A
= 25 C
@T
A
= 100 C
o
o
SYMBOL
V
F
I
R
trr
EFM301B EFM302B EFM303B EFM304B EFM305B EFM306B EFM307B
0.95
5.0
100
35
50
1.25
1.50
UNITS
Volts
uAmps
nSec
2007-3
1. Reverse Recovery Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.

EFM307B Related Products

EFM307B EFM304B EFM306B
Description 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor
Parts packaging code DO-214AA DO-214AA DO-214AA
package instruction ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts 2 2 2
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Other features LOW LEKAGE CURRENT, METALLURGICALLY BONDED LOW LEKAGE CURRENT, METALLURGICALLY BONDED LOW LEKAGE CURRENT, METALLURGICALLY BONDED
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-214AA DO-214AA DO-214AA
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
JESD-609 code e3 e3 e3
Maximum non-repetitive peak forward current 125 A 125 A 125 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 265 265 265
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 200 V 400 V
Maximum reverse recovery time 0.05 µs 0.035 µs 0.035 µs
surface mount YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form C BEND C BEND C BEND
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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