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KV2201

Description
HF-VHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
CategoryDiscrete semiconductor    diode   
File Size86KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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KV2201 Overview

HF-VHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7

KV2201 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionO-LALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage22 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio5.6
Nominal diode capacitance50 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandHIGH FREQUENCY TO VERY HIGH FREQUENCY
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
minimum quality factor125
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationHYPERABRUPT
Base Number Matches1
KV2001 – KV2801
TM
®
VARACTOR DIODES
HF/VHF/UHF Hyperabrupt Junction
RoHS Compliant
DESCRIPTION
These families of hyperabrupt junction RF varactor diodes feature
computer controlled grown junction epitaxy which provides extraordinary
consistency and the highest Q available in a 22 Volt hyperabrupt varactor.
These series give the designer a full capacitance range of 10 to 500 pF at 3
or 4 volts of bias, depending on product series. They allow octave tuning of
LC tanks through 500 MHz. With a reduced 1.5 to 1 frequency ratio,
straight-line-frequency tuning over a 3 to 8 volt tuning range is possible.
Ultrahigh Q and excellent large signal handling capabilities, along with a 2
to 1 capacitance ratio, is obtained by tuning from 9 to 20 volts of reverse
bias. Linear, wide deviation tuning of VCXO/TCXO’S and frequency
modulators also results when these diodes are tuned over a 3 to 8 volt bias
range.
Closely matched sets of all HF-VHF diodes are available along with “A”
suffix versions having ±5% capacitance tolerance at 3 or 4 volts of reverse
bias depending on series selected.
KEY FEATURES
Available as packaged devices or
as chips for hybrid applications
Octave Tuning Range
Ultrahigh Q
Available with 5% Tolerance C
T
www.MICROSEMI.com
APPLICATIONS
These families of hyperabrupt varactors are ideal for wide bandwidth
VCOs. They also provide excellent performance in frequency modulators,
voltage variable filters, analog phase shifters, TCXOs and VCXOs.
APPLICATIONS/BENEFITS
Values cover the entire HF / VHV
/ UHF spectrum;
Highest Q / lowest VCO phase
noise
Tough MIL-Spec SiO
2
passivation
Dozens of package outlines
available
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Maximum Working Voltage
Storage Temperature
Operating Temperature
Symbol
V
R
T
STG
T
OP
Value
22
-65 to +150
-55 to +150
Unit
V
KV2001-KV2801
KV2001-KV2801
ºC
ºC
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
Unless otherwise specified, these products
are supplied with Gold terminations suitable
for RoHS compliant assembly.
1
Copyright
2007
Rev: 2009-01-19
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

KV2201 Related Products

KV2201 KV2001 KV2101 KV2301 KV2401 KV2501 KV2601 KV2701 KV2801
Description HF-VHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 HF-VHF BAND, 20 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE HF-VHF BAND, 110 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 Variable Capacitance Diode, High Frequency to Very High Frequency, 155pF C(T), 22V, Silicon, Hyperabrupt, DO-7, HF-VHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 HF-VHF BAND, 300 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-14 Variable Capacitance Diode, High Frequency to Very High Frequency, 500pF C(T), 22V, Silicon, Hyperabrupt, DO-14, UHF BAND, 28 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
Reach Compliance Code compliant compli compli compli compliant compli compli compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage 22 V 22 V 22 V 22 V 22 V 22 V 22 V 22 V 22 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode Capacitance Tolerance 10% 10% 8.69% 10% 10% 10% 10% 10% 10.71%
Minimum diode capacitance ratio 5.6 5.4 5 5.9 5.8 5.8 6 6 5.2
Nominal diode capacitance 50 pF 20 pF 11.5 pF 110 pF 155 pF 200 pF 300 pF 500 pF 28 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
frequency band HIGH FREQUENCY TO VERY HIGH FREQUENCY HIGH FREQUENCY TO VERY HIGH FREQUENCY ULTRA HIGH FREQUENCY HIGH FREQUENCY TO VERY HIGH FREQUENCY HIGH FREQUENCY TO VERY HIGH FREQUENCY HIGH FREQUENCY TO VERY HIGH FREQUENCY HIGH FREQUENCY TO VERY HIGH FREQUENCY HIGH FREQUENCY TO VERY HIGH FREQUENCY ULTRA HIGH FREQUENCY
JEDEC-95 code DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-14 DO-14 DO-7
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2
Package body material GLASS GLASS GLASS GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
minimum quality factor 125 160 300 80 70 60 40 30 200
surface mount NO NO NO NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Varactor Diode Classification HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT HYPERABRUPT
Maker Microsemi Microsemi Microsemi Microsemi - Microsemi - - Microsemi
package instruction O-LALF-W2 O-LALF-W2 - O-LALF-W2 - O-LALF-W2 O-LALF-W2 - O-LALF-W2
Is it lead-free? - Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? - incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maximum operating temperature - 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature - -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED

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