MICROWAVE CORPORATION
v01.0300
HMC223MS8
GaAs MMIC T/R SWITCH
4.5 - 6.0 GHz
Features
Industry First Low Cost 4.5 - 6 GHz Switch
Ultra Small Package: MSOP8
High Input P1dB: +33 dBm
Single Positive Supply: +3 to +8V
Typical Applications
The HMC223MS8 is ideal for:
• MMDS & WirelessLAN
• Portable Wireless
• UNII & HiperLAN
• Wireless Local Loop
Functional Diagram
General Description
The HMC223MS8 is a low-cost SPDT switch in an
8-lead MSOP package for use in transmit-receive
applications. The device can control signals from 4.5
to 6 GHz and is especially suited for 5.2 GHz UNII
and 5.8 GHz ISM applications with only 1.2 dB loss.
The design provides exceptional power handling
performance; input P1dB = +33dBm at 5 Volt bias.
RF1 and RF2 are reflective shorts when “Off”. On-
chip circuitry allows single positive supply operation
at very low DC current with control inputs compat-
ible with CMOS and most TTL logic families. No DC
blocking capacitors are required on RF I/O ports.
7
SWITCHES - SMT
Electrical Specifications,
T
A
= +25° C, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
4.5 - 6.0 GHz
5.1 - 5.4 GHz
5.4 - 5.9 GHz
4.5 - 6.0 GHz
5.1 - 5.4 GHz
5.4 - 5.9 GHz
RF Common
Return Loss
RF1 & RF2
4.5 - 6.0 GHz
5.1 - 5.9 GHz
4.5 - 6.0 GHz
5.1 - 5.9 GHz
4.5 - 6.0 GHz
4.5 - 6.0 GHz
4.5 - 6.0 GHz
4.5 - 6.0 GHz
4.5 - 6.0 GHz
10
25
ns
ns
15
22
16
10
11
10
12
27
29
30
32
Min.
Typ.
1.2
1.2
1.3
25
26
20
13
15
13
16
31
33
34
36
Max.
1.7
1.6
1.7
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Inser tion Loss
Isolation
Input Power for 1dB Compression
0/3V Control
0/5V Control
0/3V Control
0/5V Control
Input Third Order Intercept
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
7 - 94
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
MICROWAVE CORPORATION
v01.0300
HMC223MS8
GaAs MMIC T/R SWITCH
4.5 - 6.0 GHz
Insertion Loss
0
-0.5
INSERTION LOSS (dB)
-1
-1.5
-2
-2.5
-3
-3.5
-4
3
4
5
FREQUENCY (GHz)
6
7
Isolation
0
-10
ISOLATION (dB)
-20
-30
-40
3
4
5
FREQUENCY (GHz)
6
7
Return Loss
0
-5
RETURN LOSS (dB)
S22
-10
-15
-20
-25
S11 RFC
-30
3
4
5
FREQUENCY (GHz)
6
7
7
SWITCHES - SMT
7 - 95
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
MICROWAVE CORPORATION
v01.0300
HMC223MS8
GaAs MMIC T/R SWITCH
4.5 - 6.0 GHz
Truth Table
*Control Input Voltage Tolerances are ± 0.2 Vdc.
Bias
Vdd
(Vdc)
3
3
3
5
5
5
Control
Input*
A
(Vdc)
0
0
Vdd
0
0
Vdd
B
(Vdc)
0
Vdd
0
0
Vdd
0
Bias
Current
ldd
(uA)
10
10
10
45
45
45
Control
Current
la
(uA)
-5
-10
0
-22
-5
-40
Control
Current
lb
(uA)
-5
0
-10
-23
-40
-5
Signal
Path State
RF to
RF1
OFF
ON
OFF
OFF
ON
OFF
RF to
RF2
OFF
OFF
ON
OFF
OFF
ON
Absolute Maximum Ratings
Bias Voltage Range (Vdd)
Control Voltage Range (A & B)
Storage Temperature
Operating Temperature
-0.2 to +12 Vdc
-0.2 to Vdd Vdc
-65 to +150 deg C
-40 to +85 deg C
Caution: Do not operate in 1dB compression at power levels
above +33 dBm and do not “hot switch” power levels greater than
+23 dBm (Vdd = +5Vdc).
DC blocks are not required at ports RFC, RF1 and RF2.
7
SWITCHES - SMT
Outline Drawing
1. MATERIAL
A. PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC,
SILICA & SILICONE IMPREGNATED
B. LEADFRAME MATERIAL: COPPER ALLOY
2. PLATING: LEAD-TIN SOLDER PLATE
3. DIMENSIONS ARE IN INCHES (MILLIMETERS)
7 - 96
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
MICROWAVE CORPORATION
v01.0300
HMC223MS8
GaAs MMIC T/R SWITCH
4.5 - 6.0 GHz
Typical Application Circuit
RF2
RF1
GND
GND
+V
R1
A
B
Vdd
+V
R2
R3
CTL
CMOS
CMOS
RF
7
SWITCHES - SMT
7 - 97
Notes:
1. Control Inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic
gates and to pin 4 of the RF switch.
2. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface.
3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B ports. Resistors R1, R2, R3 = 100 Ohms should be
placed close to the Vdd, A and B ports. Use resistor size 0402 to minimize parasitic inductances and capacitances.
5. DC Blocking capacitors are not required for each RF port.
6. Evaluation PCB available.
See Section 8 for Layout Guidelines Application Note.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
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