HYMD212G726BS4M-H datasheet, PDF

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HYMD212G726BS4M-H: DescriptionLow Profile Registered DDR SDRAM DIMM; Categorystorage storage; File Size153KB，17 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYMD212G726BS4M-H Overview

Low Profile Registered DDR SDRAM DIMM

HYMD212G726BS4M-H Parametric

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	DIMM
package instruction	DIMM, DIMM184
Contacts	184
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
memory density	9663676416 bi
Memory IC Type	DDR DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	184
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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128Mx72 bits

Low Profile Registered DDR SDRAM DIMM

HYMD212G726B(L)S4M-M/K/H/L

Revision History

Revision No.

0.1

History

Defined Target Spec.

Draft Date

Dec. 2003

Remark

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.1 / Dec. 2003

HYMD212G726BS4M-H Related Products

	HYMD212G726BS4M-H	HYMD212G726BLS4M-H	HYMD212G726BLS4M-K	HYMD212G726BLS4M-L	HYMD212G726BLS4M-M	HYMD212G726BS4M-K	HYMD212G726BS4M-L
Description	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM	Low Profile Registered DDR SDRAM DIMM
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184
Contacts	184	184	184	184	184	184	184
Reach Compliance Code	unknow	compli	compli	compli	compli	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	0.75 ns	0.75 ns	0.75 ns	0.8 ns	0.75 ns	0.75 ns	0.8 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	133 MHz	133 MHz	100 MHz	133 MHz	133 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
memory density	9663676416 bi	9663676416 bi	9663676416 bi	9663676416 bi	9663676416 bi	9663676416 bi	9663676416 bi
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	72	72	72	72	72	72	72
Number of functions	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1
Number of terminals	184	184	184	184	184	184	184
word count	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words
character code	128000000	128000000	128000000	128000000	128000000	128000000	128000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128MX72	128MX72	128MX72	128MX72	128MX72	128MX72	128MX72
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192
self refresh	YES	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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