74LX1G125
SINGLE BUS BUFFER (3-STATE)
s
s
s
s
s
s
s
s
s
5V TOLERANT INPUTS
HIGH SPEED: t
PD
= 4.7ns (MAX.) at V
CC
= 3V
LOW POWER DISSIPATION:
I
CC
= 1µA (MAX.) at T
A
= 25°C
POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24mA (MIN) at V
CC
= 3V
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 1.65V to 5.5V
(1.2V Data Retention)
LATCH-UP PERFORMANCE EXCEED
300mA
RoHS FLIP-CHIP AND SOT PACKAGES
SOT23-5L
SOT323-5L
Flip-Chip5
(Max dim = 1.3x1.3mm)
ORDER CODES
PACKAGE
DESCRIPTION
The 74LX1G125 is a low voltage CMOS SINGLE
BUS BUFFER fabricated with sub-micron silicon
gate and double-layer metal wiring C
2
MOS
technology.
3-STATE control input G has to be set HIGH to
place the output into the high impedance state.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V or lower power supply
systems. The sub-micron CMOS technology used
PIN CONNECTION AND IEC LOGIC SYMBOLS
(top view for SOT, top through view for Flip-Chip)
O
so
b
te
le
r
P
uc
od
s)
t(
so
b
-O
SOT23-5L
SOT323-5L
Flip-Chip5
et
l
P
e
od
r
s)
t(
uc
T&R
74LX1G125STR
74LX1G125CTR
74LX1G125BJR
allow ultra low power consumption and guarantee
optimized operations between 2.8V and 1.8V
system, as Smart Phone, Digital Still Camera,
PDA, Notebook, or each other battery powered
equipment.
All inputs and outputs are equipped with
protection circuits against ESD discharge.
April 2004
1/13
74LX1G125
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
SOT23-5L PIN N°
1
2
4
3
5
Flip-Chip PIN N°
5
1
3
2
4
SYMBOL
1G
1A
1Y
GND
V
CC
NAME AND FUNCTION
Output Enable Input
Data Input
Data Output
Ground (0V)
TRUTH TABLE
A
X
L
H
X : Don’t Care
Z : High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
b
O
so
V
O
V
O
I
IK
I
OK
I
O
T
L
te
le
Supply Voltage
r
P
uc
od
s)
t(
bs
-O
G
H
L
L
et
l
o
Positive Supply Voltage
P
e
od
r
s)
t(
uc
Y
Z
L
H
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 50
- 50
±
50
±
50
-65 to +150
260
Unit
V
V
V
V
mA
mA
mA
mA
°C
°C
DC Input Voltage
DC Output Voltage (V
CC
= 0V)
DC Output Voltage (High or Low State) (note 1)
DC Input Diode Current
DC Output Diode Current (note 2)
DC Output Current
I
CC
or I
GND
DC V
CC
or Ground Current per Supply Pin
T
stg
Storage Temperature
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) I
O
absolute maximum rating must be observed
2) V
O
< GND
2/13
74LX1G125
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
V
O
I
OH
, I
OL
I
OH
, I
OL
I
OH
, I
OL
I
OH
, I
OL
I
OH
, I
OL
T
op
dt/dv
Supply Voltage (note 1)
Input Voltage
Output Voltage (V
CC
= 0V)
Output Voltage (High or Low State)
High or Low Level Output Current (V
CC
= 4.5 to 5.5V)
High or Low Level Output Current (V
CC
= 3.0 to 3.6V)
High or Low Level Output Current (V
CC
= 2.7 to 3.0V)
High or Low Level Output Current (V
CC
= 2.3 to 2.7V)
High or Low Level Output Current (V
CC
= 1.65 to 2.3V)
Operating Temperature
Input Rise and Fall Time
(V
CC
= 3.0 to 5.5V) (note 2)
(V
CC
= 1.65 to 2.7V) (note 2)
Parameter
Value
1.65 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
±
32
±
24
±
12
±
8
±
4
-55 to 125
0 to 10
0 to 20
Unit
V
V
V
V
mA
mA
mA
mA
mA
°C
ns/V
1) Truth Table guaranteed: 1.2V to 5.5V
2) V
IN
from 0.8V to 2V at V
CC
= 3.0V
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
3/13
74LX1G125
AC ELECTRICAL CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
C
L
(pF)
R
L
(Ω)
t
s
=
t
r
(ns)
-40 to 85 °C
Min.
2
2
1
1
2
2
1
1
1
2
2
1
1
2
2
1
1
1
2
2
1
1
2
2
1
1
1
Max.
10.0
7.0
4.7
4.1
11.0
7.5
5.5
5.2
4.2
12.0
7.0
5.5
5.0
9.2
5.5
5.2
5.0
4.2
12.0
7.0
6.0
5.5
9.4
6.6
5.6
5.3
5.0
Value
-55 to 125 °C
Min.
2
2
1
1
2
2
1
1
1
2
2
1
1
2
2
1
1
1
2
2
1
1
2
2
1
1
1
Max.
11.0
8.0
5.7
5.1
12.0
8.5
6.5
6.2
5.2
12.0
7.0
5.5
5.0
9.2
5.5
5.2
5.0
4.2
12.0
7.0
6.0
5.5
9.4
6.6
5.6
5.3
5.0
Unit
t
PLH
t
PHL
Propagation Delay
Time
t
PLZ
t
PHZ
t
PZL
t
PZH
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
1.65 to 1.95
2.3 to 2.7
2.7
3.0 to 3.6
4.5 to 5.5
Output Disable Time 1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
1.65 to 1.95
2.3 to 2.7
2.7
3.0 to 3.6
4.5 to 5.5
Output Enable Time 1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
1.65 to 1.95
2.3 to 2.7
2.7
3.0 to 3.6
4.5 to 5.5
15
1MΩ
3.0
30
30
50
50
50
1000
500
500
500
500
2.0
2.0
2.5
2.5
2.5
ns
15
1MΩ
3.0
30
30
50
50
50
1000
500
500
500
500
2.0
2.0
2.5
2.5
2.5
15
CAPACITIVE CHARACTERISTICS
Symbol
b
O
C
OUT
C
PD
so
C
IN
te
le
r
P
uc
od
s)
t(
30
30
50
50
50
bs
-O
1000
500
500
500
500
2.0
2.0
2.5
2.5
2.5
1MΩ
3.0
et
l
o
P
e
od
r
s)
t(
uc
ns
ns
Test Condition
V
CC
(V)
V
IN
= 0 or V
CC
V
IN
= 0 or V
CC
1.8
2.5
3.3
f
IN
= 10MHz
Value
T
A
= 25 °C
Min.
Typ.
4
5
18
18
21
10
Max.
pF
pF
pF
Unit
Parameter
Input Capacitance
Output Capacitance
Power Dissipation Capacitance
(note 1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
5/13
Embedded System
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