SSF3624
DESCRIPTION
The SSF3624 uses advanced trench
technology to provide excellent R
DS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
Schematic diagram
GENERAL FEATURES
●
V
DS
= 30V,I
D
=6A
R
DS(ON)
< 40mΩ @ V
GS
=4.5V
R
DS(ON)
< 32mΩ @ V
GS
=10V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Marking and pin Assignment
Application
●PWM
applications
●Load
switch
●Power
management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
SSF3624
Device
SSF3624
Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500
units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
30
±20
6
30
2
-55 To 150
Unit
V
V
A
A
W
℃
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
62.5
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=30V,V
GS
=0V
Min
30
Typ
Max
Unit
V
1
μA
©Silikron Semiconductor CO.,LTD.
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v1.0
SSF3624
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V
SD
V
GS
=0V,I
S
=1.7A
0.8
1.0
V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
rr
Q
rr
I
F
=5A, dI/dt=100A/µs
V
DS
=15V,I
D
=5A,V
GS
=10V
V
DS
=15V,V
GS
=10V,R
GEN
=6Ω
I
D
=1A
10
20
45
45
18
3
5
26
15
nS
nS
nS
nS
nC
nC
nC
nS
nC
C
lss
C
oss
C
rss
V
DS
=24V,V
GS
=0V,
F=1.0MHz
700
200
70
PF
PF
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=3.9A
V
GS
=10V, I
D
=6A
V
DS
=15V,I
D
=5A
1.0
31
23
7
2.5
40
32
V
mΩ
mΩ
S
I
GSS
V
GS
=±20V,V
DS
=0V
±100
nA
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on 1in
2
FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v1.0
SSF3624
ATTENTION:
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
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©Silikron Semiconductor CO.,LTD.
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