CYStech Electronics Corp.
N-CHANNEL MOSFET
(dual transistors)
Spec. No. : C320S6R
Issued Date : 2007.12.23
Revised Date :2008.01.25
Page No. : 1/ 7
MTDN3018S6R
Features
• Low on-resistance
• High ESD capability
• High speed switching
• Low-voltage drive(4V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Equivalent Circuit
MTDN3018S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Reverse Current
Power Dissipation
Continuous
Pulsed
Continuous
Pulsed
V
DSS
V
GSS
I
D
I
DP
I
DR
I
DRP
Pd
Tj
Tstg
60
±20
115
700
115
700
1250
150
-55~+150
(Note 1)
(Note 1)
(Note 3)
V
V
mA
mA
mA
mA
mW
300(total)
(Note 2)
ESD susceptibility
Junction Temperature
Storage Temperature
Note : 1. Pulse test, pulse width≤300μs, duty≤2%
2
. 200mW per element must not be exceeded
.
V
°C
°C
3. Human body model, 1.5kΩ in series with 100pF
MTDN3018S6R
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics
(Ta=25°C)
Symbol
Min.
Typ.
Max.
BV
DSS*
60
-
-
V
GS(th)
1
-
2.5
I
GSS
-
-
±10
I
DSS
-
-
1
-
7.4
13
-
7.8
15
R
DS(ON)*
-
4.4
12
-
4.9
6
-
3.3
4.5
G
FS
100
-
-
C
iss
-
7.32
-
C
oss
-
3.42
-
C
rss
-
7.63
-
Spec. No. : C320S6R
Issued Date : 2007.12.23
Revised Date :2008.01.25
Page No. : 2/ 7
Unit
V
V
μA
μA
Ω
mS
pF
Test Conditions
V
GS
=0, I
D
=10μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±20V, V
DS
=0
V
DS
=60V, V
GS
=0
I
D
=1mA, V
GS
=2.5V
I
D
=10mA, V
GS
=2.5V
I
D
=10mA, V
GS
=4V
I
D
=200mA, V
GS
=4V
I
D
=200mA, V
GS
=10V
V
DS
=10V, I
D
=100mA
V
DS
=10V, V
GS
=0, f=1MHz
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
MTDN3018S6R
Package
SOT-363
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
72
MTDN3018S6R
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Typical Output Characteristics
0.3
4V
0.25
Drain Current - ID(A)
0.2
0.15
0.1
0.05
VGS=2.2V
0
0
1
2
3
Drain-Source Voltage -VDS(V)
Static Drain-Source On-State resistance vs Drain Current
4
3V
6V
3.5V
Spec. No. : C320S6R
Issued Date : 2007.12.23
Revised Date :2008.01.25
Page No. : 3/ 7
Typical Transfer Characteristics
0.3
0.25
Drain Current -ID(A)
0.2
0.15
0.1
0.05
0
0
1
2
3
Gate-Source Voltage-VGS(V)
Static Drain-Source On-State resistance vs Drain Current
VDS=10V
4
1000
Static Drain-Source On-State Resistance-
RDS(on)(Ω)
10
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
100
VGS=2.5V
VGS=4V
VGS=5V
VGS=10V
10
1
0.001
0.01
0.1
Drain Current-ID(A)
1
1
0.001
0.01
0.1
1
Drain Current-ID(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Reverse Drain Current vs Source-Drain Voltage
10
Source-Drain Voltage-VSD(V)
7
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
6
5
4
3
2
1
0
0
5
10
15
20
Gate-Source Voltage-VGS(V)
25
ID=50mA
ID=100mA
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
Reverse Drain Current -IDR(A)
1
MTDN3018S6R
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves (Cont.)
Capacitance vs Drain-to-Source Voltage
100
350
Power Dissipation---P
D
(mW)
300
250
200
150
100
50
0
0
50
100
Spec. No. : C320S6R
Issued Date : 2007.12.23
Revised Date :2008.01.25
Page No. : 4/ 7
Power Derating Curves
dual
Capacitance---(pF)
single
10
Crss
Ciss
C
oss
1
0.1
1
10
Drain-Source Voltage -VDS(V)
100
150
200
Ambient Temperature --- Ta(℃ )
MTDN3018S6R
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C320S6R
Issued Date : 2007.12.23
Revised Date :2008.01.25
Page No. : 5/ 7
Carrier Tape Dimension
MTDN3018S6R
CYStek Product Specification
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