CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C720E3
Issued Date : 2009.06.06
Revised Date :
Page No. : 1/8
MTN8N45E3
Description
BV
DSS
: 450V
R
DS(ON)
: 0.85Ω
I
D
: 8A
The MTN8N45E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
•
BV
DSS
=500V typically @ Tj=150℃
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
RoHS compliant package
Applications
•
Ballast
•
Inverter
Symbol
MTN8N45E3
Outline
TO-220
G：Gate
D：Drain
S：Source
G D S
MTN8N45E3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Spec. No. : C720E3
Issued Date : 2009.06.06
Revised Date :
Page No. : 2/8
Limits
Unit
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @T
C
=100°C
Pulsed Drain Current @ V
GS
=10V
(Note 2)
Single Pulse Avalanche Energy
(Note 3)
Avalanche Current
(Note 2)
Repetitive Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 4)
Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm)
from case for 10 seconds
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor above 25℃
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Note : 1
.
T
J
=+25
℃
to +150
℃
.
2
.
Repetitive rating; pulse width limited by maximum junction temperature.
3
.
I
SD
=8A, dI/dt<100A/μs, V
DD
<BV
DSS
, T
J
=+150
℃
.
4. I
AS
=8A, V
DD
=50V, L=8mH, R
G
=25Ω, starting T
J
=+25℃.
V
DS
V
GS
I
D
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
T
L
P
D
Tj, Tstg
450
±30
8*
4.8*
32*
290
8
12.5
3.5
300
125
1.0
-55~+150
V
V
A
A
A
mJ
A
mJ
V/ns
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
1.0
62.5
Unit
°C/W
°C/W
MTN8N45E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
Min.
450
-
-
2.0
-
-
-
-
-
Typ.
-
500
0.6
-
5
-
-
-
-
30
5
16
14
23
49
20
1300
310
120
-
-
-
460
4.2
Max.
-
-
-
4.0
-
±
100
1
25
0.85
-
-
-
-
-
-
-
-
-
-
1.5
8
32
-
-
Unit
V
V
V/°C
V
S
nA
μA
Ω
Test Conditions
Spec. No. : C720E3
Issued Date : 2009.06.06
Revised Date :
Page No. : 3/8
*R
DS(ON)
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*V
SD
-
*I
S
-
*I
SM
-
*trr
-
*Qrr
-
V
GS
=0, I
D
=250μA
V
GS
=0, I
D
=250μA, Tj=150°C
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=15V, I
D
=4A
V
GS
=
±
30
V
DS
=450V, V
GS
=0
V
DS
=360V, V
GS
=0, Tj=125°C
V
GS
=10V, I
D
=4A
nC
I
D
=8A, V
DD
=250V, V
GS
=10V
V
DD
=250V, I
D
=8A, V
GS
=10V,
R
G
=10
Ω
ns
pF
V
GS
=0V, V
DS
=25V, f=1MHz
V
A
ns
μC
I
S
=4A, V
GS
=0V
V
D
=V
G
=0, V
S
=1.3V
V
GS
=0, I
F
=8A, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
MTN8N45E3
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Marking
8N45
MTN8N45E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C720E3
Issued Date : 2009.06.06
Revised Date :
Page No. : 4/8
MTN8N45E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C720E3
Issued Date : 2009.06.06
Revised Date :
Page No. : 5/8
MTN8N45E3
CYStek Product Specification
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