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AS7C33256FT18B-10TQI

Description
3.3V 256K x 18 Flow Through Synchronous SRAM
Categorystorage    storage   
File Size392KB,19 Pages
ManufacturerALSC [Alliance Semiconductor Corporation]
Download Datasheet Parametric View All

AS7C33256FT18B-10TQI Overview

3.3V 256K x 18 Flow Through Synchronous SRAM

AS7C33256FT18B-10TQI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerALSC [Alliance Semiconductor Corporation]
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time10 ns
Other featuresFLOW-THROUGH ARCHITECTURE
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density4718592 bi
Memory IC TypeSTANDARD SRAM
memory width18
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX18
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
December 2004
®
AS7C33256FT18B
3.3V 256K
×
18 Flow Through Synchronous SRAM
Features
Organization: 262,144 words × 18 bits
Fast clock to data access: 6.5/7.5/8.0/10.0 ns
Fast OE access time: 3.5/4.0 ns
Fully synchronous flow through operation
Asynchronous output enable control
Availalbe in 100-pin TQFP package
Individual byte write and Global write
Multiple chip enables for easy expansion
3.3V core power supply
2.5V or 3.3V I/O operation with separate V
DDQ
Linear or interleaved burst control
Snooze mode for reduced power standby
Common data inputs and data outputs
Logic block diagram
LBO
CLK
ADV
ADSC
ADSP
A[17:0]
CLK
CS
CLR
Burst logic
Q
18
D
CS
Address
register
CLK
2
2
256K × 18
Memory
array
18
16
18
18
18
GWE
BW
b
BWE
BW
a
CE0
CE1
CE2
D
DQb
Q
Byte Write
registers
CLK
D
DQa
Q
Byte Write
registers
CLK
D
2
OE
Enable
register
Q
CE
CLK
Output
Buffers
Input
registers
CLK
ZZ
Power
down
D
Enable
Q
delay
register
CLK
OE
18
DQ [a,b]
Selection guide
–65
Minimum cycle time
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
7.5
6.5
250
120
30
-75
8.5
7.5
225
100
30
-80
10
8.0
200
90
30
-10
12
10.0
175
90
30
Units
ns
ns
mA
mA
mA
12/10/04; v.1.4
Alliance Semiconductor
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Copyright © Alliance Semiconductor. All rights reserved.
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