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DF06S

Description
1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size107KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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DF06S Overview

1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

DF06S Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage600 V
Maximum average input current1 A
Processing package descriptionROHS COMPLIANT, PLASTIC, DF-S, 4 PIN
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage600 V
Maximum non-repetitive peak forward current50 A
DF005S thru DF10S SERIES
SINGLE-PHASE GLASS BRIDGE
CHENG- YI
ELECTRONIC
VOLTAGE RANGE
50 TO 1000 VOLTS
CURRENT
1.0 Amperes
FEATURES
Surge overload rating-50 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Polariy symbols molded on body
Mounting Position: Any
Glass passivated junctions
8.5
8.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DF005S
DF01S
100
70
100
DF02S
200
140
200
DF04S
400
280
400
1.0
DF06S
600
420
600
DF08S
800
560
800
DF10S
1000
700
1000
UNITS
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current @
TA=40 C
0
V
RRM
V
RMS
V
DC
V
(AV)
50
35
50
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load
Maximum DC Forward Voltage at ADC
Maximum DC Reverse Current
at rated DC Blocking Voltage
I
2
t Rating for fusing (t<8.3ms)
Typical Junction Capacitance per element
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
R
@ TA=25
0
C
@ TA=100 C
0
I
FSM
50
A
V
F
I
R
I
2
t
C
J
JC
T
J
T
STG
1.1
10
500
10.4
25
40
0
V
A
A
AS
PF
2
C/W
0
-55 to +125
-55 to +150
C
C
0

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