GBJ/KBJ15A thru GBJ/KBJ15M
SILICON BRIDGE RECTIFIERS
GLASS PASSIVATED
BRIDGE RECTIFIERS
CHENG- YI
ELECTRONIC
REVERSE VOLTAGE -50 to 1000 Volts
FORWARD CURRENT -15.0 Amperes
HIKE FOR NO.
6 SCRES
5.16
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability
Reliable low cost construction utilizing
molded plastic technique results in
inexpensive product
The plastic material has UL
flammability classification 94V-O
SPACING
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note2)
Rectified Current @
TC=100 C
(without heatsink)
0
SYMBOL
GBJ
KBJ
15A
50
35
50
GBJ
KBJ
15B
100
70
100
GBJ
KBJ
15D
200
140
200
GBJ
KBJ
15G
400
280
400
15.0
3.2
GBJ
KBJ
15J
600
420
600
GBJ
KBJ
15K
800
560
800
GBJ
KBJ
15M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at 7.5A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for fusing (t<8.3ms)
Typical Junction Capacitance
per element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
R
@ TJ=25
0
C
@ TJ=125
0
C
I
FSM
220
A
V
F
I
R
I
2
t
C
J
JC
T
J
T
STG
1.05
10
500
240
60
0.8
0
V
A
A
2
S
PF
C/W
0
-55 to +150
-55 to +150
C
C
0
NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 300mm x 300mm X 1.6mm Cu Plate Heatsink.
GBJ/KBJ15A thru GBJ/KBJ15M
SILICON BRIDGE RECTIFIERS
GLASS PASSIVATED
BRIDGE RECTIFIERS
RATING AND CHARACTERISTICS CURVES
GBJ/KBJ15A THRU GBJ/KBJ15M
FIG. 2
-
MAXIMUM NON-REPETITIVE
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
180
CHENG- YI
ELECTRONIC
FIG. 1
-
FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
6.0
WITH HEATSINK
160
5.0
4.0
140
120
100
80
60
40
20
0
1
2
5
10
20
50
100
Single Half Sine-Wave
(JEDEC METHOD)
3.0
WITHOUT HEATSINK
2.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.0
0
20
40
60
80
100
0
120
140
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
100
10
FIG. 4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
CAPACITANCE, (pF)
1.0
10
0.1
0
TJ=25C, f= 1MHz
0
TJ=25C
PULSE WIDTH:300
S
1.0
1.0
4.0
10.0
100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
REVERSE VOLTAGE, VOLTS
INSTANTANEOUS FORWARD VOLT
AGE, VOLTS
FIG. 5
-
TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT, ( A)
100
0
TJ=125C
0
TJ=100C
10
TJ=50
0
C
1.0
TJ=25
0
C
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
Microcontroller MCU
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