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KBPC2506W

Description
25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size123KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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KBPC2506W Overview

25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

KBPC25W SERIES
SINGLE-PHASE SILICON BRIDGE
CHENG- YI
ELECTRONIC
VOLTAGE RANGE
50 TO 1000 VOLTS PRV
CURRENT
25 Amperes
FEATURES
UL recognized file #E149311
Surge overload rating-300 amperes peak
Solderable cooper leads 0.40" diameter
Low forward voltage drop
Mounting position: Any
Electrically isolated base-1800 Volts
Materials use carries U/L recognition
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Resistive or inductive load, 60 Hz. For capacitive load, derate current by 20%.
KBPC
25005W
KBPC
2501W
KBPC
2502W
KBPC
2504W
KBPC
2506W
KBPC
2508W
KBPC
2510W
UNITS
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Output Current @
TC=55 C
0
V
RRM
V
RMS
V
DC
V
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
25
600
420
600
800
560
800
1000
700
1000
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load(JEDEC Mehtod)
Maximum DC Forward Voltage
drop per element at 12.5A DC
Maximum DC Reverse Current
at rated DC Blocking Voltage
I
2
t Rating for fusing (t<8.3ms)
Typical Thermal Resistance(Note.1)
Operating Temperature Range
Storage Temperature Range
R
@ TA=25
0
C
@ TA=100 C
0
I
FSM
300
A
V
F
I
R
I
2
t
JC
T
J
T
STG
1.2
10
1
373
2.5
0
V
A
A
A
2
S
C/W
0
-55 to +125
-55 to +150
C
C
0

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Description 25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE single-phase silicon bridge
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