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KBPC35005W

Description
35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size125KB,2 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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KBPC35005W Overview

35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

KBPC35W SERIES
SINGLE-PHASE SILICON BRIDGE
CHENG- YI
ELECTRONIC
VOLTAGE RANGE
50 TO 1000 VOLTS PRV
CURRENT
35 Amperes
FEATURES
UL recognized file #E149311
Surge overload rating-400 amperese peak
Low forward voltage drop
Solderable cooper leads .040" diameter
Mounting position:Any
Electrically isolated base-1800Volts
Materials used carries U/L recognized
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Resistive or inductive load, 60 Hz. For capacitive load, derate current by 20%.
KBPC
35005W
KBPC
3501W
KBPC
3502W
KBPC
3504W
KBPC
3506W
KBPC
3508W
KBPC
3510W
UNITS
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Output Current @
TC=55 C
0
V
RRM
V
RMS
V
DC
V
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
35
600
420
600
800
560
800
1000
700
1000
Peak Forward Surge Current
8.3 ms single half sine-wave
superimposed on rated load(JEDEC Mehtod)
Maximum DC Forward Voltage drop
per bridge element at 17.5A DC
Maximum DC Reverse Current
at rated DC Blocking Voltage
per bridge element
I
2
t Rating for fusing (t<8.3ms)
Typical Thermal Resistance(Note.1)
Operating Temperature Range
Storage Temperature Range
R
@ TA=25
0
C
@ TA=100
0
C
I
FSM
400
A
V
F
I
R
I
2
t
JC
T
J
T
STG
1.2
10
1
664
2.5
0
V
A
A
A
2
S
C/W
0
-55 to +125
-55 to +150
C
C
0

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Description 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
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