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AS7C33256NTD36A-166TQIN

Description
3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD
Categorystorage    storage   
File Size426KB,19 Pages
ManufacturerALSC [Alliance Semiconductor Corporation]
Environmental Compliance
Download Datasheet Parametric View All

AS7C33256NTD36A-166TQIN Overview

3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD

AS7C33256NTD36A-166TQIN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerALSC [Alliance Semiconductor Corporation]
Parts packaging codeQFP
package instructionLQFP, QFP100,.63X.87
Contacts100
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time3.8 ns
Other featuresPIPELINED ARCHITECTURE; LATE WRITE
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee3
length20 mm
memory density9437184 bi
Memory IC TypeZBT SRAM
memory width36
Number of functions1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)245
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.03 A
Minimum standby current3.14 V
Maximum slew rate0.475 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width14 mm
November 2004
®
AS7C33256NTD32A
AS7C33256NTD36A
3.3V 256K×32/36 Pipelined burst Synchronous SRAM with NTD
TM
Features
• Organization: 262,144 words × 32 or 36 bits
• NTD
architecture for efficient bus operation
• Fast clock speeds to 166 MHz
• Fast clock to data access: 3.5/4.0 ns
• Fast OE access time: 3.5/4.0 ns
• Fully synchronous operation
• Common data inputs and data outputs
• Asynchronous output enable control
• Available in 100-pin TQFP
• Byte write enables
• Clock enable for operation hold
• Multiple chip enables for easy expansion
• 3.3 core power supply
• 2.5V or 3.3V I/O operation with separate V
DDQ
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
Logic Block Diagram
A[17:0]
18
D
Address
register
Burst logic
Q
18
CLK
D
CE0
CE1
CE2
R/W
BWa
BWb
BWc
BWd
ADV / LD
LBO
ZZ
36/32
Write delay
addr. registers
CLK
Q
18
Control
logic
CLK
Write Buffer
CLK
36/32
256K x 32/36
SRAM
Array
DQ [a:d]
D
Data
Q
Input
Register
CLK
36/32
36/32
36/32
CLK
CEN
CLK
Output
Register
OE
36/32
OE
DQ[a:d]
Selection Guide
-166
Minimum cycle time
Maximum clock frequency
Maximum clock access time
Maximum operating current
Maximum standby current
Maximum CMOS standby current (DC)
6
166
3.5
475
130
30
-133
7.5
133
4
400
100
30
Units
ns
MHz
ns
mA
mA
mA
11/30/04, v. 2.1
Alliance Semiconductor
P. 1 of 19
Copyright © Alliance Semiconductor. All rights reserved.
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