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TMMBAT43

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size111KB,7 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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TMMBAT43 Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

TMMBAT43 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeMELF
package instructionGLASS, MINIMELF-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFAST SWITCHING
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.45 V
JESD-30 codeO-LELF-R2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current4 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse current0.5 µA
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
TMMBAT42 - TMMBAT43
Small signal Schottky diodes
Datasheet
-
production data
Description
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic
discharges.
Features
Very small conduction losses
Negligible switching losses
Low forward voltage drop
July 2015
This is information on a product in full production.
DocID3497 Rev 3
1/7
www.st.com

TMMBAT43 Related Products

TMMBAT43 TMMBAT42
Description 0.2 A, 30 V, SILICON, SIGNAL DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE
Is it Rohs certified? conform to conform to
Parts packaging code MELF MELF
package instruction GLASS, MINIMELF-2 O-LELF-R2
Contacts 2 2
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features FAST SWITCHING FAST SWITCHING
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.45 V 0.65 V
JESD-30 code O-LELF-R2 O-LELF-R2
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 4 A 4 A
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 0.2 A 0.2 A
Package body material GLASS GLASS
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.2 W 0.2 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 30 V 30 V
Maximum reverse current 0.5 µA 0.5 µA
Maximum reverse recovery time 0.005 µs 0.005 µs
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
Terminal form WRAP AROUND WRAP AROUND
Terminal location END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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