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BLF871_15: DescriptionUHF power LDMOS transistor; File Size203KB，19 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BLF871_15 Overview

UHF power LDMOS transistor

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BLF871; BLF871S

UHF power LDMOS transistor

Rev. 04 — 19 November 2009

Product data sheet

1. Product profile

1.1 General description

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The

excellent ruggedness and broadband performance of this device makes it ideal for digital

transmitter applications.

Table 1.

Typical performance

RF performance at V

= 40 V in a common-source 860 MHz test circuit.

Mode of operation

CW, class AB

2-tone, class AB

DVB-T (8k OFDM)

[1]

[2]

(MHz)

860

= 860; f

= 860.1

858

L(PEP)

L(AV)

(W)

IMD3

−35

−34

[1]

PAR

(dB)

8.3

[2]

(W) (W)

100 -

100

(dB) (%) (dBc)

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

2-tone performance at 860 MHz, a drain-source voltage V

of 40 V and a quiescent

drain current I

= 0.5 A:

Peak envelope power load power = 100 W

Power gain = 21 dB

Drain efficiency = 47 %

Third order intermodulation distortion =

−35

dBc

DVB performance at 858 MHz, a drain-source voltage V

of 40 V and a quiescent

drain current I

= 0.5 A:

Average output power = 24 W

Power gain = 22 dB

Drain efficiency = 33 %

Third order intermodulation distortion =

−34

dBc (4.3 MHz from center frequency)

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