refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
3EZ6.2D5/D
1
August, 2007 - Rev. 0
3EZ6.2D5 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 1.5 V Max @ I
F
= 200 mA for all types)
Symbol
V
Z
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
I
ZM
I
R
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Breakdown Voltage
Forward Current
Forward Voltage @ I
F
Maximum DC Zener Current
Surge Current @ T
A
= 25°C
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 1.5 V Max @ I
F
= 200 mA for all types)
Zener Voltage
(Note 2)
Device†
(Note 1)
Device
Marking
V
Z
(Volts)
Min
Nom
Max
@ I
ZT
mA
Zener Impedance
(Note 3)
Z
ZT
@ I
ZT
W
Z
ZK
@ I
ZK
W
mA
Leakage Current
I
R
@ V
R
mA
Max
Volts
I
ZM
mA
I
R
(Note 4)
mA
3EZ6.2D5RLG
3EZ6.2D
5.89
6.2
6.51
121
1.5
700
1
5
3
435
3.1
3EZ13D5G
3EZ13D
12.35
13
13.65
58
4.5
700
0.25
0.5
9.9
208
1.54
3EZ16D5RLG
3EZ16D
15.2
16
16.8
47
5.5
700
0.25
0.5
12.2
169
1.25
3EZ18D5RLG
3EZ18D
17.1
18
18.9
42
6.0
750
0.25
0.5
13.7
150
1.11
1.
TOLERANCE AND TYPE NUMBER DESIGNATION
Tolerance designation - device tolerance of
±5%
are indicated by a “5” suffix.
2.
ZENER VOLTAGE (V
Z
) MEASUREMENT
ON Semiconductor guarantees the zener voltage when measured at 40 ms
±10
ms, 3/8″ from the diode body. And an ambient temperature
of 25°C (+8°C, -2°C)
3.
ZENER IMPEDANCE (Z
Z
) DERIVATION
The zener impedance is derived from 60 seconds AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
4.
SURGE CURRENT (I
R
) NON-REPETITIVE
The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or
equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC standards. However, actual device
capability is as described in Figure 3 of the General Data sheet for Surmetic 30s.
†The “G'' suffix indicates these are Pb-Free packages.
5
P
D
, STEADY STATE POWER
DISSIPATION (WATTS)
L = 1/8″
4
L = 3/8″
3
L = LEAD LENGTH
TO HEAT SINK
2
L = 1″
1
0
0
20
40
60
80 100 120 140 160
T
L
, LEAD TEMPERATURE (°C)
180
200
Figure 1. Power Temperature Derating Curve
http://onsemi.com
2
3EZ6.2D5 Series
θ
JL(t, D) TRANSIENT THERMAL RESISTANCE
JUNCTION‐TO‐LEAD (
°
C/W)
30
20
10
7
5
3
2
D =0.5
0.2
0.1
0.05
0.02
0.01
D=0
0.0005
0.001
0.002
0.005
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
0.01
0.02
0.05
t, TIME (SECONDS)
0.1
0.2
P
PK
t
2
DUTY CYCLE, D =t
1
/t
2
t
1
1
0.7
0.5
SINGLE PULSE
DT
JL
=
q
JL
(t)P
PK
REPETITIVE PULSES
DT
JL
=
q
JL
(t,D)P
PK
0.5
1
2
5
10
0.3
0.0001 0.0002
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
1K
PPK , PEAK SURGE POWER (WATTS)
500
300
200
100
50
30
20
10
0.1
0.2 0.3 0.5
1
2 3
5
10
PW, PULSE WIDTH (ms)
20 30 50
100
RECTANGULAR
NONREPETITIVE
WAVEFORM
T
J
= 25°C PRIOR
TO INITIAL PULSE
3
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0005
0.0003
T
A
= 125°C
IR , REVERSE LEAKAGE (μ Adc) @ VR
AS SPECIFIED IN ELEC. CHAR. TABLE
T
A
= 125°C
1
2
5
10
20
50 100
NOMINAL V
Z
(VOLTS)
200
400
1000
Figure 3. Maximum Surge Power
Figure 4. Typical Reverse Leakage
APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
q
LA
P
D
+ T
A
DT
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
DT
JL
=
q
JL
P
D
q
LA
is the lead‐to‐ambient thermal resistance (°C/W) and
P
D
is the power dissipation. The value for
q
LA
will vary and
depends on the device mounting method.
q
LA
is generally
30-40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady‐state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+
DT
JL
For worst‐case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(DT
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
DV
=
q
VZ
DT
J
q
VZ
, the zener voltage temperature coefficient, is found
from Figures 5 and 6.
Under high power‐pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
http://onsemi.com
3
3EZ6.2D5 Series
TEMPERATURE COEFFICIENT RANGES
(90% of the Units are in the Ranges Indicated)
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C) @ I ZT
10
8
6
4
2
0
-2
-4
3
4
5
6
7
8
9
10
V
Z
, ZENER VOLTAGE @ I
ZT
(VOLTS)
11
12
RANGE
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C) @ I ZT
1000
500
200
100
50
20
10
10
20
50
100
200
400
V
Z
, ZENER VOLTAGE @ I
ZT
(VOLTS)
1000
Figure 5. Units to 12 Volts
Figure 6. Units 10 to 400 Volts
ZENER VOLTAGE versus ZENER CURRENT
(Figures 7, 8 and 9)
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2
3
4
5
6
7
V
Z
, ZENER VOLTAGE (VOLTS)
8
9
10
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
10
20
30
40
50
60
70
V
Z
, ZENER VOLTAGE (VOLTS)
80
90
100
IZ, ZENER CURRENT (mA)
Figure 7. V
Z
= 3.3 thru 10 Volts
θ
JL, JUNCTION‐TO‐LEAD THERMAL RESISTANCE (
°
C/W)
80
70
60
50
40
30
20
10
0
0
1/8
T
L
L
IZ , ZENER CURRENT (mA)
Figure 8. V
Z
= 12 thru 82 Volts
L
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
1/4
3/8
1/2
5/8
3/4
L, LEAD LENGTH TO HEAT SINK (INCH)
7/8
1
Figure 9. Typical Thermal Resistance
http://onsemi.com
4
3EZ6.2D5 Series
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59-01
ISSUE U
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
K
F
D
A
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
F
K
DIM
A
B
D
F
K
INCHES
MIN
MAX
0.161 0.205
0.079 0.106
0.028 0.034
--- 0.050
1.000
---
MILLIMETERS
MIN
MAX
4.10
5.20
2.00
2.70
0.71
0.86
---
1.27
25.40
---
Surmetic is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support:
800-282-9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81-3-5773-3850
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
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