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SRS3120HE

Description
2 A, 1200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size31KB,2 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric Compare View All

SRS3120HE Overview

2 A, 1200 V, SILICON, RECTIFIER DIODE

SRS3120HE Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSENSITRON
package instructionE-XALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-XALF-W2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum output current2 A
Package body materialUNSPECIFIED
Package shapeELLIPTICAL
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse recovery time0.06 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SENSITRON
_____
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5141, REV -
SRS3120HE
SRS3120HEU
HIGH EFFICIENCY POWER RECTIFIER
DESCRIPTION: 1200 VOLT, 2.0 AMP ULTRA FAST RECTIFIER
FEATURES:
Single Chip Construction
Hermetically Sealed
Metallurgically Bonded
Ultra Fast Recovery: 60 ns max @ 25
o
C
Low Reverse Leakage Current
For High Efficiency Applications
TX, TXV and S-Level Screening Available
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
RATING
Peak Inverse Voltage (PIV)
Average DC Output Current (I
O
)
Peak Single Cycle Surge Current
(I
FSM
)
Operating and Storage Temp. (T
OP
& T
STG
)
Breakdown Voltage (V
BR
)
Maximum Forward Voltage (V
F
)
All ratings are at T
A
= 25°C unless otherwise specified
MIN
-
-
-
TYP
-
-
-
MAX
1200
2.0
60
UNIT
Vdc
Amps
Amps(pk)
°C
Vdc
-
-
-
-
1.6
1.95
Volts
CONDITIONS
-
T
L
= +75°C, L = 0”
t
p
= 8.3 ms Single Half Cycle Sine
Wave, Superimposed On Rated
Load
-
I
R
= 50
μA
I
F
= 1.4 A
I
F
= 2.0 A
(300
μsec
pulse, duty cycle < 2%)
-65
1200
-
-
-
-
-
+175
Maximum Instantaneous Reverse
Current At Rated PIV
Reverse Recovery Time (t
rr
)
T
A
= +25°C
T
A
= +150°C
I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
A
= 25°C
T
A
= 125°C
4
600
μAmps
-
-
-
-
-
-
-
-
60
200
22
6.5
nsec
Thermal Resistance (R
ΘJL
, AXIAL)
(R
ΘJEC
, MELF)
Junction to Lead, d = 0.375”
Junction to End Caps
°C/W
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com

SRS3120HE Related Products

SRS3120HE SRS3120HEU
Description 2 A, 1200 V, SILICON, RECTIFIER DIODE 2 A, 1200 V, SILICON, RECTIFIER DIODE
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker SENSITRON SENSITRON
package instruction E-XALF-W2 E-LELF-R2
Contacts 2 2
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code E-XALF-W2 E-LELF-R2
Maximum non-repetitive peak forward current 60 A 60 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum output current 2 A 2 A
Package body material UNSPECIFIED GLASS
Package shape ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1200 V 1200 V
Maximum reverse recovery time 0.06 µs 0.06 µs
surface mount NO YES
Terminal form WIRE WRAP AROUND
Terminal location AXIAL END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
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