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SRS3130HEU

Description
2 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size31KB,2 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
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SRS3130HEU Overview

2 A, SILICON, RECTIFIER DIODE

SENSITRON
_____
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5142, REV -
SRS3130HE
SRS3130HEU
HIGH EFFICIENCY POWER RECTIFIER
DESCRIPTION: 1300 VOLT, 2.0 AMP SUPER FAST RECTIFIER
FEATURES:
Single Chip Construction
Hermetically Sealed
Metallurgically Bonded
Super Fast Recovery: 100 ns max @ 25
o
C
Low Reverse Leakage Current
For High Efficiency Applications
TX, TXV and S-Level Screening Available
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
RATING
Peak Inverse Voltage (PIV)
Average DC Output Current (I
O
)
Peak Single Cycle Surge Current
(I
FSM
)
Operating and Storage Temp. (T
OP
& T
STG
)
Breakdown Voltage (V
BR
)
Maximum Forward Voltage (V
F
)
All ratings are at T
A
= 25°C unless otherwise specified
MIN
-
-
-
TYP
-
-
-
MAX
1300
2.0
20
UNIT
Vdc
Amps
Amps(pk)
°C
Vdc
-
-
-
-
1.95
2.5
Volts
CONDITIONS
-
T
L
= +75°C, L = 0”
t
p
= 8.3 ms Single Half Cycle Sine
Wave, Superimposed On Rated
Load
-
I
R
= 50
μA
I
F
= 0.75 A
I
F
= 2.0 A
(300
μsec
pulse, duty cycle < 2%)
-65
1300
-
-
-
-
-
+175
Maximum Instantaneous Reverse
Current At Rated PIV
Reverse Recovery Time (t
rr
)
T
A
= +25°C
T
A
= +125°C
I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
A
= 25°C
T
A
= 125°C
10
200
μAmps
-
-
-
-
-
-
-
-
100
200
30
10
nsec
Thermal Resistance (R
ΘJL
, AXIAL)
(R
ΘJEC
, MELF)
Junction to Lead, d = 0.375”
Junction to End Caps
°C/W
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com

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SRS3130HEU SRS3130HE
Description 2 A, SILICON, RECTIFIER DIODE 2 A, SILICON, RECTIFIER DIODE

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