2N3512 datasheet, PDF - EEWORLD Datasheet

2N3512: DescriptionSmall Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-39; CategoryDiscrete semiconductor The transistor; File Size78KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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2N3512 Overview

Small Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-39

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
Collector-emitter maximum voltage	35 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	45 ns
Maximum opening time (tons)	30 ns
VCEsat-Max	0.4 V

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