TO-220F 5A Triac
TM541S-L, TM561S-L
s
Features
q
Repetitive peak off-state voltage: V
DRM
=400, 600V
q
RMS on-state current: I
T(RMS)
=5A
q
Gate trigger current: I
GT
=20mA max (MODE , ,
q
UL approved type available
External Dimensions
(Unit: mm)
φ
3.3
±
0.2
16.9
±
0.3
0.2
8.4
±
4.0
±
0.2
10.0
±
0.2
4.2
±
2.8
0.2
C 0.5
3.9
±
0.2
0.8
±
0.2
)
q
Isolation voltage: V
ISO
=1500V(50Hz Sine wave, RMS)
13.0 min
a
b
1.35
±
1.35
±
0.15
0.15
+
0.2
0.85
–
0.1
+
0.2
0.45 –
0.1
2.4
±
2.54
2.2
±
0.2
2.54
0.2
(1). Terminal 1 (T
1
)
(2). Terminal 2 (T
2
)
(3). Gate (G)
a. Part Number
b. Lot Number
(1) (2) (3)
Weight: Approx. 2.1g
sAbsolute
Maximum Ratings
Parameter
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Symbol
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
V
ISO
Ratings
TM541S-L
400
5.0
50
10
2
5
0.5
– 40 to
+
125
– 40 to
+
125
1500
TM561S-L
600
Unit
V
A
A
V
A
W
W
°C
°C
Vrms
Conditions
Conduction angle 360°, Tc=104°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical
Characteristics
Parameter
Off-state current
On-state voltage
(Tj=25°C,
unless otherwise specified)
Symbol
I
DRM
V
TM
Ratings
min
typ
0.3
max
2.0
0.1
1.6
0.7
2.0
2.0
2.0
20
20
20
0.7
0.8
0.8
7
8
10
15
0.2
5
4.0
Unit
mA
V
Conditions
V
D
=V
DRM
, R
GK
=
∞
, Tj=125°C
V
D
=V
DRM
, R
GK
=
∞
, Tj=25°C
Pulse test, I
TM
=7A
T
2
, G
V
V
D
=6V, R
L
=10Ω, T
C
=25°C
T
2
, G
T
2
, G
T
2
, G
+
+
–
–
–
–
+
+
+
–
Gate trigger voltage
V
GT
–
+
+
–
T
2
, G
mA
V
D
=6V, R
L
=10Ω, T
C
=25°C
T
2
, G
T
2
, G
T
2
, G
V
mA
°C/W
V
D
=1/2
×
V
DRM
, Tj=125°C
V
D
=6V
Junction to case
Gate trigger current
I
GT
–
+
Gate non-trigger voltage
Holding current
Thermal resistance
V
GD
I
H
Rth
34
TM541S-L, TM561S-L
v
T
–
i
T
Characteristics (max)
100
50
I
T(RMS)
– P
T(AV)
Characteristics
7
I
T(RMS)
– Tc Ratings
150
Average on-state power P
T(AV)
(W)
Full-cycle sinewave
Conduction angle : 360°
6
5
4
3
2
1
0
125
Case temperature T
C
(°C)
i
T
(A)
10
5
Tj=125°C
100
75
On-state current
Tj=25°C
1
0.5
50
25
0
Full-cycle sinewave
Conduction angle : 360°
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
6
0
1
2
3
4
5
6
On-state voltage
v
T
( V )
RMS on-state current I
T (RMS)
(A)
RMS on-state current I
T (RMS)
(A)
I
T(RMS)
– Ta Ratings
140
120
Full-cycle sinewave
Conduction angle : 360°
Self-supporting
Natural cooling
No wind
V
GT
temperature characteristics
(Typical)
1.2
1.0
MODE
MODE
MODE
(V
D
=6V, R
L
=10Ω)
I
GT
temperature characteristics
(Typical)
100
50
(V
D
=6V, R
L
=10Ω)
Ambient temperature T
a
(°C)
Gate trigger voltage V
GT
(V)
Gate trigger current I
GT
(mA)
100
80
60
40
20
0
0.8
0.6
0.4
0.2
0
–40
MODE
MODE
MODE
10
5
0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
1
– 40
0
25
50
75
100
125
RMS on-state current I
T (RMS)
(A)
Junction temperature Tj (°C)
Junction temperature Tj (°C)
Transient thermal resistance
Characteristics
100
r
th
(°C/W)
Junction to
operating
environment
10
Transient thermal resistance
Junction to
case
1
0.1
0.1
1
10
10
2
10
3
10
4
10
5
t, Time (ms)
35
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