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DMN62D0UDW-7

Description
Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size523KB,7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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DMN62D0UDW-7 Overview

Small Signal Field-Effect Transistor, 0.35A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6

DMN62D0UDW-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionGREEN, ULTRA SMALL, PLASTIC PACKAGE-6
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time16 weeks
Samacsys DescriptionMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
Other featuresHIGH RELIABILITY
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.35 A
Maximum drain-source on-resistance2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
DMN62D0UDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
max
2Ω @ V
GS
= 4.5V
2.5Ω @ V
GS
= 2.5V
I
D
max
T
A
= +25°
C
350mA
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
60V
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Motor Control
Power Management Functions
SOT363
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D1
D2
D
2
G
1
S
1
G1
ESD Protected Gate
Gate Protection
Diode
G2
S1
Gate Protection
Diode
S2
S
2
G
2
Top View
Pin out
D
1
Top View
Q1 N-Channel
Q2 N-Channel
Equivalent Circuit
Ordering Information
Part Number
DMN62D0UDW-7
DMN62D0UDW-13
Notes:
(Note 4)
Case
SOT363
SOT363
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
LEE = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
2016
Code
D
Month
Code
Jan
1
2017
E
Feb
2
2018
F
Mar
3
2019
G
Apr
4
2020
H
May
5
2021
I
Jun
6
2022
J
Jul
7
2023
K
Aug
8
2024
L
Sep
9
2025
M
Oct
O
2026
N
Nov
N
2027
O
Dec
D
August 2016
DMN62D0UDW
Document number: DS38029 Rev. 2 - 2
1 of 7
www.diodes.com
© Diodes Incorporated
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