DMN90H8D5HCTI
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
900V
R
DS(ON)
7Ω@V
GS
= 10V
I
D
T
C
= +25°
C
2.5A
Features
Low Input Capacitance
High BV
DSS
Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation complementary dual MOSFET features low on-
resistance and fast switching, making it ideal for high efficiency power
management applications.
Mechanical Data
Case: ITO220AB (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight:1.85 grams (Approximate)
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
ITO220AB (Type TH)
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information
(Note 4)
Part Number
DMN90H8D5HCTI
Notes:
Case
ITO220AB (Type TH)
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
90H8D5
YYWW
=Manufacturer’s Marking
90H8D5 = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 17 = 2017)
WW or WW= Week Code (01 to 53)
DMN90H8D5HCTI
Document number: DS39235 Rev. 2 - 2
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June 2017
© Diodes Incorporated
DMN90H8D5HCTI
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
V
GS
= 10V
Pulsed Drain Current (Note 6)
Avalanche Current,
L = 60mH
(Note 7)
Avalanche Energy,
L = 60mH
(Note 7)
Peak Diode Recovery dv/dt
(Note 7)
Symbol
V
DSS
V
GSS
T
C
= +25°
C
T
C
= +100°
C
I
D
I
DM
I
AS
E
AS
dv/dt
Value
900
±30
2.5
1.5
3
1.8
97
3.3
Unit
V
V
A
A
A
mJ
V/ns
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T
C
= +25°
C
T
C
= +100°
C
T
C
= +25°
C
Symbol
P
D
R
θJC
T
J
,
T
STG
Max
30
12
4.2
-55 to +150
Unit
W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
rr
Min
900
3.0
Typ
5.5
470
45
0.6
1.2
7.9
2.5
2.9
16
21
17.6
17
375
2.9
Max
1
100
5.0
7.0
1.2
Unit
V
µA
nA
V
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 900V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 1A
V
GS
= 0V, I
S
= 2A
pF
nC
V
DS
= 25V, f = 1.0MHz,
V
GS
= 0V
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DD
= 720V, I
D
= 2A,
V
GS
= 10V
ns
V
DD
= 450V, R
G
= 25, I
D
= 2A,
V
GS
= 10V
dI/dt = 100A/μs, V
DS
= 100V,
I
F
= 2A
ns
µC
5. Device mounted on infinite heatsink. Drain current limited by maximum junction temperature.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
DMN90H8D5HCTI
Document number: DS39235 Rev. 2 - 2
2 of 7
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© Diodes Incorporated
DMN90H8D5HCTI
1.0
0.9
0.8
I
D
, DRAIN CURRENT (A)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
2
4
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
10
V
GS
= 5.0V
V
GS
= 20V
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
V
GS
= 8.0V
V
GS
= 7.0V
V
GS
= 6.0V
V
GS
= 5.5V
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
8
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
30
25
20
15
10
5
0
0
5
10
15
20
25
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
30
T
J
= 150℃
T
J
= 125℃
T
J
= 85℃
T
J
= 25℃
T
J
= -55℃
V
DS
= 20V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
10
9
8
7
V
GS
= 10V
6
5
4
3
2
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0
I
D
= 1A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
18
16
14
12
10
8
6
4
2
0
0
V
GS
=10V
T
J
= 125℃
T
J
= 150℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
20
3
2.5
2
V
GS
= 10V, I
D
= 1A
T
J
= 85℃
1.5
T
J
= 25℃
T
J
= -55℃
1
0.5
0
-50
-25
0
25
50
75 100 125
T
J
, JUNCTION TEMPERATURE (℃)
150
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
Figure 6. On-Resistance Variation with Temperature
DMN90H8D5HCTI
Document number: DS39235 Rev. 2 - 2
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DMN90H8D5HCTI
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
20
18
16
14
12
10
8
6
4
2
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS
= 10V, I
D
= 1A
6
5
I
D
= 1mA
4
I
D
= 250μA
3
2
1
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
2
1.8
I
S
, SOURCE CURRENT (A)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
T
J
= 125℃
T
J
= 85℃
T
J
= 150℃
T
J
= 25℃
T
J
= -55℃
V
GS
= 0V
10000
f=1MHz
C
T
, JUNCTION CAPACITANCE (pF)
1000
C
iss
100
C
oss
10
1
C
rss
0
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure10. Typical Junction Capacitance
40
10
10
R
DS(ON)
Limited
I
D
, DRAIN CURRENT (A)
P
W
=100μs
8
1
V
GS
(V)
6
V
DS
= 720V, I
D
= 2A
4
0.1
P
W
=1ms
P
W
=10ms
P
W
=100ms
T
J(Max)
=150℃
T
C
=25℃
P
W
=1s
Single Pulse
P
W
=10s
DUT on 1*MRP
board
DC
V
GS
=10V
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
0.01
2
0
0
1
2
3
4
5
Qg (nC)
6
7
8
0.001
Figure 11. Gate Charge
DMN90H8D5HCTI
Document number: DS39235 Rev. 2 - 2
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DMN90H8D5HCTI
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.7
D=0.9
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 43℃/W
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
100
1000
DMN90H8D5HCTI
Document number: DS39235 Rev. 2 - 2
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June 2017
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