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ZVP4525ZTC

Description
Small Signal Field-Effect Transistor, 0.205A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-89, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size138KB,9 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
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ZVP4525ZTC Overview

Small Signal Field-Effect Transistor, 0.205A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-89, 3 PIN

ZVP4525ZTC Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT-89
package instructionSOT-89, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)0.205 A
Maximum drain current (ID)0.205 A
Maximum drain-source on-resistance14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1.2 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
ZVP4525Z
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-250V; R
DS(ON)
=14 ; I
D
=-205mA
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage switching circuits.
SOT223 and SOT23-6 versions are also available.
FEATURES
SOT89
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
Complementary N-channel Type ZVN4525Z
SOT89 package
APPLICATIONS
Earth Recall and dialling switches
Electronic hook switches
High Voltage Power MOSFET Drivers
Telecom call routers
Solid state relays
ORDERING INFORMATION
DEVICE
ZVP4525ZTA
ZVP4525ZTC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
12mm embossed
12mm embossed
QUANTITY
PER REEL
1000 units
4000 units
D
Top View
S
D
G
DEVICE MARKING
P52
ISSUE 2 - JUNE 2007
1
SEMICONDUCTORS

ZVP4525ZTC Related Products

ZVP4525ZTC
Description Small Signal Field-Effect Transistor, 0.205A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-89, 3 PIN
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker Diodes Incorporated
Parts packaging code SOT-89
package instruction SOT-89, 3 PIN
Contacts 3
Reach Compliance Code compliant
ECCN code EAR99
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V
Maximum drain current (Abs) (ID) 0.205 A
Maximum drain current (ID) 0.205 A
Maximum drain-source on-resistance 14 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-F3
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Minimum operating temperature -55 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type P-CHANNEL
Maximum power dissipation(Abs) 1.2 W
Certification status Not Qualified
surface mount YES
Terminal form FLAT
Terminal location SINGLE
Maximum time at peak reflow temperature 40
transistor applications SWITCHING
Transistor component materials SILICON
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