DCG130X1200NA
prelimininary
SiC Schottky Diode
Ultra fast switching
Zero reverse recovery
V
RRM
= 1200 V
I
FAV
= 2x 60 A
Part number
DCG130X1200NA
Backside: isolated
UL pending
2
3
1
4
Features / Advantages:
• Ultra fast switching
• Zero reverse recovery
• Zero forward recovery
• Temperature independent switching
behavior
• Positive temperature coefficient of forward
voltage
• T
VJM
= 175°C
Applications:
• Solar inverter
• Uninterruptible power supply (UPS)
• Welding equipment
• Switched-mode power supplies
• Medical equipment
• High speed rectifier
Package:
SOT-227B (minibloc)
• Isolation Voltage: 3000 V~
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
• Base plate with Aluminium nitride
isolation for low thermal resistance
• Advanced power cycling
Terms & Conditions of Usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product
data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be
considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, test conditions and dimensions.
20180115a
© 2018 IXYS All rights reserved
1-6
DCG130X1200NA
prelimininary
SiC Diode (per leg)
Symbol
V
RSM
V
RRM
I
R
V
F
Definitions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
V
R
= V
RRM
I
F
= 30 A
I
F
= 60 A
I
F
= 30 A
I
F
= 60 A
T
VJ
= 25°C
T
VJ
= 175°C
T
VJ
= 25°C
T
VJ
= 175°C
rectangular, d = 0.5
T
VJ
= 175°C
T
C
= 25°C
T
C
= 80°C
T
C
= 100°C
T
VJ
= 25°C
V
R
= 0V
T
VJ
= 125°C
175°C
T
VJ
= 125°C
175°C
T
VJ
= 25°C
0.80
0.73
20.0
24.6
300
4500
280
200
0.43
with heatsink compound; IXYS test setup
0.55
140
480
1.3
1.6
1.55
2.3
min.
typ.
max.
1200
1200
800
1200
1.8
3
60
53
105
81
71
1150
V
V
µA
µA
V
V
V
V
A
A
A
A
A
A
A
V
V
mW
mW
nC
pF
pF
pF
K/W
K/W
I
FAV
I
F25
I
F80
I
F100
I
FSM
V
F0
r
F
Q
C
C
average forward current
forward current
T
C
= 80°C
T
C
= 100°C
based on typ. V
F0
and r
F
max forward surge current
threshold voltage
slope resistance
total capacitive charge
total capacitance
t = 10 ms,half sine (50 Hz)
t
P
= 10 µs, pulse
for power loss calculation
V
R
= 800 V, I
F
= 60A
dI/dt = 800 A/µs
V
R
= 0 V
V
R
= 400 V
V
R
= 800 V
T
VJ
= 25°C, f = 1 MHz
R
thJC
R
thJH
thermal resistance junction to case
thermal resistance junction to heatsink
IXYS reserves the right to change limits, test conditions and dimensions.
20180115a
© 2018 IXYS All rights reserved
2-6
DCG130X1200NA
prelimininary
Package
Symbol
I
RMS
T
stg
T
op
T
VJ
Weight
M
D
d
Spp
d
Spb
d
App
d
Apb
V
ISOL
C
P
1)
Outlines SOT-227B (minibloc)
Definitions
RMS current
storage temperature
operation temperature
virtual junction temperature
mounting torque
1)
Conditions
per terminal
min.
-40
-40
-40
Ratings
typ. max.
100
150
150
175
30
1.5
1.3
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
mm
mm
V
V
pF
screws to heatsink
terminal connection screws
terminal to terminal
terminal to backside
terminal to terminal
terminal to backside
creepage distance on surface
striking distance through air
isolation voltage
coupling capacity per switch
10.5
8.5
3.2
6.8
3000
2500
t = 1 second
t = 1 minute
50 / 60 Hz, RMS; I
ISOL
< 1 mA
between shorted terminals of diodes and back side
metallization
further information see application note IXAN0073 on
www.ixys.com/TechnicalSupport/appnotes.aspx (General / Isolation, Mounting, Soldering, Cooling)
Product Marking
Part No.
Logo
XXXXX
®
Zyyww
abcd
Part description
D
C
G
130
X
1200
NA
= Diode
= SiC
= Extreme fast
= Current Rating [A]
= Parallel legs
= Reverse Voltage [V]
= SOT-227 (minibloc)
Assembly Line
DateCode
Assembly Code
Ordering
Standard
Part Name
DCG130X1200NA
Marking on Product
DCG130X1200NA
Delivering Mode Base Qty
Tube
10
Ordering Code
521458
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
*
on die level, typical
T
VJ
= 125°C
T
VJ
= 175°C
V
0 max
R
0 max
0.80
20.0
0.73
24.6
V
mW
IXYS reserves the right to change limits, test conditions and dimensions.
20180115a
© 2018 IXYS All rights reserved
3-6
DCG130X1200NA
prelimininary
Outlines SOT-227B (minibloc)
J
K
Z
Nut M4 DIN 934
Lens Head
Screw M4x8
DIN 7985
B
H
A
G
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
Z
4
D
3
2
C
T
V
M
W
N
*
1
S
E
L
P
F
*
Q
U
2
3
R
* Center of each nut pocket
Millimeter
min
max
31.50
31.88
7.80
8.20
4.09
4.29
4.09
4.29
4.09
4.29
14.91
15.11
30.12
30.30
37.80
38.23
11.68
12.22
8.92
9.60
0.74
0.84
12.50
13.10
25.15
25.42
1.95
2.13
6.20
4.95
26.90
26.54
4.42
3.94
4.55
4.85
24.59
25.25
-0.05
0.10
3.20
5.50
19.81
21.08
2.50
2.70
Inches
min
max
1.240
1.255
0.307
0.323
0.161
0.169
0.161
0.169
0.161
0.169
0.587
0.595
1.186
1.193
1.488
1.505
0.460
0.481
0.351
0.378
0.029
0.033
0.492
0.516
0.990
1.001
0.077
0.084
0.195
0.244
1.045
1.059
0.155
0.167
0.179
0.191
0.968
0.994
-0.002 0.004
0.126
0.217
0.780
0.830
0.098
0.106
O
1
4
IXYS reserves the right to change limits, test conditions and dimensions.
20180115a
© 2018 IXYS All rights reserved
4-6
DCG130X1200NA
prelimininary
SiC Diode (per leg)
120
2.8
100
80
T
VJ
= 25°C
125°C
175°C
2.4
2.0
I
F
[A]
I
R
60
40
1.6
[mA]
1.2
0.8
20
0
0
1
2
3
4
0.4
0.0
800
T
VJ
= 25°C
125°C
175°C
1000
1200
1400
1600
1800
V
F
[V]
Fig. 1 Typ. forward characteristics
400
10% Duty
30% Duty
50% Duty
70% Duty
DC
400
V
R
[V]
Fig. 2 Typ. reverse characteristics
320
300
240
P
tot
200
I
F(peak)
[A]
160
[W]
100
80
0
25
0
50
75
100
125
150
175
50
100
150
T
C
[°C]
Fig. 3 Typ. current derating
360
320
4000
280
240
200
3200
4800
T
C
[°C]
Fig. 4 Power derating
Q
C
T
VJ
= 25°C
[nC]
C
2400
1600
800
160
120
80
40
0
0
200
400
600
800
1000
[pF]
0
0.1
1
10
100
1000
V
R
[V]
Fig. 5 Typ. recovery charge vs. reverse voltage
IXYS reserves the right to change limits, test conditions and dimensions.
V
R
[V]
Fig. 6 Typ. junction capacitance vs. reverse Voltage
20180115a
© 2018 IXYS All rights reserved
5-6
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