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MUBW15-06A7

Description
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size194KB,8 Pages
ManufacturerIXYS
Environmental Compliance  
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MUBW15-06A7 Overview

Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel,

MUBW15-06A7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Reach Compliance Codecompliant
Other featuresLOW SWITCHING LOSS, LOW SATURATION VOLTAGE
Shell connectionISOLATED
Maximum collector current (IC)25 A
Collector-emitter maximum voltage600 V
ConfigurationCOMPLEX
JESD-30 codeR-XUFM-X24
JESD-609 codee3
Number of components7
Number of terminals24
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)260 ns
Nominal on time (ton)80 ns
MUBW 15-06 A7
Converter - Brake - Inverter Module
(CBI2)
21
D11
1
D12
D13
2
D14
D15
7
3
D16
14
23
24
8
NTC
T7
22
D7
T1
16
15
6
T2
11
10
D2
12
D1
T3
18
17
T4
D3
T5
20
19
T6
13
D5
5
D4
4
D6
9
Three Phase
Rectifier
V
RRM
= 1600V
I
DAVM
= 26 A
I
FSM
= 160 A
Brake Chopper
V
CES
= 600 V
I
C25
= 20 A
V
CE(sat)
= 1.9 V
Three Phase
Inverter
V
CES
= 600 V
I
C25
= 25 A
V
CE(sat)
= 1.9 V
Application: AC motor drives with
q
Input Rectifier Bridge D11 - D16
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
T
C
= 80°C; sine 180°
T
C
= 80°C; rectangular; d = 1/3
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
T
C
= 25°C
Conditions
Maximum Ratings
1600
19
18
160
85
V
A
A
A
W
q
q
Input from single or three phase grid
Three phase synchronous or
asynchronous motor
electric braking operation
Features
q
q
q
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.4
1.4
1
1
1.6
0.1
V
V
mA
mA
µs
1.47 K/W
q
V
F
I
R
t
rr
R
thJC
I
F
= 15 A; T
VJ
= 25°C
T
VJ
= 125°C
V
R
= V
RRM
; T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 100 V; I
F
= 10 A; di/dt = -10 A/µs
(per diode)
q
q
High level of integration - only one power
semiconductor module required for the
whole drive
Fast rectifier diodes for enhanced EMC
behaviour
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
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