DATA SHEET
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25
°C)
P
T
(Ta = 25
°C)
T
j
T
stg
Ratings
−100
−100
−7.0
−7.0
−15
−3.5
40
1.5
150
−55
to +150
Unit
V
V
Pin Connection
V
A
A
A
W
W
°C
°C
* PW
≤
300
µ
s, duty cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1010
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector to emitter voltage
Collector to emitter voltage
Symbol
V
CEO(SUS)
V
CEX(SUS)1
Conditions
I
C
=
−5.0
A, I
B1
=
−0.5
A, L = 1 mH
I
C
=
−5.0
A, I
B1
=
−I
B2
=
−0.5
A,
V
BE(OFF)
= 5.0 V, L = 180
µ
H, clamped
I
C
=
−10
A, I
B1
=
−1.0
A, I
B2
=
−0.5
A,
V
BE(OFF)
= 5.0 V, L = 180
µ
H, clamped
V
CB
=
−100
V, I
E
= 0
V
CE
=
−100
V, R
BE
= 51
Ω,
Ta = 125
°C
V
CE
=
−100
V, V
BE(OFF)
= 1.5 V
V
CE
=
−100
V, V
BE(OFF)
= 1.5 V,
Ta = 125
°C
V
EB
=
−5.0
V, I
C
= 0
V
CE
=
−5.0
V, I
C
=
−0.5
A*
V
CE
=
−5.0
V, I
C
=
−3.0
A*
V
CE
=
−5.0
V, I
C
=
−5.0
A*
I
C
=
−5.0
A, I
B
=
−0.5
A*
I
C
=
−5.0
A, I
B
=
−0.5
A*
I
C
=
−5.0
A, R
L
= 10
Ω,
I
B1
=
−I
B2
=
−0.5
A, V
CC
≅ −50
V
Refer to the test circuit.
Fall time
t
f
0.5
40
40
20
−0.6
−1.5
0.5
1.5
V
V
MIN.
−100
−100
−100
−10
−1.0
−10
−1.0
−10
200
200
TYP.
MAX.
Unit
V
V
Collector to emitter voltage
V
CEX(SUS)2
V
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
I
CBO
I
CER
I
CEX1
I
CEX2
µ
A
mA
µ
A
mA
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(sat)
V
BE(sat)
t
on
t
stg
µ
A
µ
s
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE2
M
40 to 80
L
60 to 120
K
100 to 200
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
With infinite heatsink
Ambient Temperature Ta (°C)
Collector Current I
C
(A)
2 mm aluminum board,
no insulating board,
grease coating, natural
air cooling
Collector to Emitter Voltage V
CE
(V)
2
Data Sheet D16118EJ2V0DS
DC Current Gain h
FE
I
C
Derating dT (%)
Collector Current I
C
(A)
Case Temperature T
C
(
°
C)
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Collector Current I
C
(A)
Data Sheet D16118EJ2V0DS
Base Saturation Voltage V
BE(sat)
(V)
Collector Saturation Voltage V
CE(sat)
(V)
Transient Thermal Resistance
θ
th(j-c)
(
°
C/W)
Pulse Width PW (ms)
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
2SA1010
3
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