DATA SHEET
SILICON POWER TRANSISTOR
2SA1847
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1847 is a power transistor developed for high-speed switching and features a high h
FE
at low V
CE(sat)
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Auto-mount possible in radial taping specifications
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
• High h
FE
and low V
CE(sat)
:
V
CE(sat)
=
−0.3
V MAX. @I
C
=
−6.0
V, I
B
=
−0.3
A
h
FE
≥
100
• Fast switching speed
@V
CE
=
−2.0
V, I
C
=
−2.0
A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
Ta = 25°C
PW
≤
300
µ
s, duty cycle
≤
2%
Conditions
Ratings
−150
−100
−7.0
−10
−20
−6.0
1.8
150
−55
to +150
Unit
V
V
V
A
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15593EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SA1847
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Collector cutoff current
Symbol
I
CBO
I
CER
Conditions
V
CB
=
−100
V, I
E
= 0
V
CE
=
−100
V, R
EB
= 50
Ω
Ta = 125°C
V
CE
=
−100
V, V
BE(off)
= 1.5 V
V
CE
=
−100
V, V
BE(off)
= 1.5 V
Ta = 125°C
V
EB
=
−5.0
V, I
C
= 0
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−2.0
A
V
CE
=
−2.0
V, I
C
=
−6.0
A
I
C
=
−6.0
A, I
B
=
−0.3
A
I
C
=
−8.0
A, I
B
=
−0.4
A
I
C
=
−6.0
A, I
B
=
−0.3
A
I
C
=
−8.0
A, I
B
=
−0.4
A
V
CE
=
−10
V, I
C
=
−0.5
A
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
I
C
=
−6.0
A
I
B1
=
−I
B2
=
−0.3
A
R
L
= 8.3
Ω,
V
CC
=
−50
V
150
250
0.3
1.5
0.4
100
100
60
−0.3
−0.5
−1.2
−1.5
400
MIN.
TYP.
MAX.
−10
−1.0
−10
−1.0
−10
Unit
µ
A
mA
Collector cutoff current
Collector cutoff current
I
CEX1
I
CEX2
µ
A
mA
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Turn-on time
Storage time
Fall time
I
EBO
h
FE1
*
h
FE2
*
h
FE3
*
V
CE(sat)1
*
V
CE(sat)2
*
V
BE(sat)1
*
V
BE(sat)2
*
f
T
C
ob
t
on
t
stg
t
f
µ
A
−
−
−
V
V
V
V
MHz
pF
µ
s
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE
M
100 to 200
L
150 to 300
K
200 to 400
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base
2. Collector
3. Emitter
2
Data Sheet D15593EJ2V0DS
2SA1847
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
Ambient Temperature Ta (°C)
IC Derating dT (%)
Ambient Temperature Ta (°C)
Single pulse
Transient Thermal Resistance r
th(j-a)
(t) (
°
C/W)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Pulse Width PW (s)
Pulse test
Collector Current I
C
(A)
DC Current Gain h
FE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Data Sheet D15593EJ2V0DS
3
4
Turn-On Time t
on
(
µ
s)
Storage Time t
stg
(
µ
s)
Fall Time t
f
(
µ
s)
Gain Bandwidth Product f
T
(MHz)
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(A)
Collector Current I
C
(A)
Pulse test
Collector Current I
C
(A)
Collector Capacitance C
ob
(pF)
Data Sheet D15593EJ2V0DS
Base Saturation Voltage V
BE(sat)
Collector Current I
C
(A)
Collector to Base Voltage V
CB
(V)
Pulse test
2SA1847
Analog electronics
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