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2SA1871

Description
Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size3MB,399 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SA1871 Overview

Power Bipolar Transistor, 1A I(C), 600V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

2SA1871 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
SEMICONDUCTORS
SELECTION
GUIDE
Microcomputer 1
IC Memory 2
Semi-Custom IC 3
Particular Purpose 4
General Purpose Linear IC 5
Transistor/Diode/Thyristor 6
RF and Microwave Devices 7
Optical Device 8
Index 9
April 1999

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Index Files: 2850  2111  2322  1613  1482  58  43  47  33  30 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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