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2SB804

Description
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, MINIMOLD, SC-62, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size3MB,226 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SB804 Overview

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, POWER, MINIMOLD, SC-62, 3 PIN

2SB804 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
C
&
C
for Human Potential
Microcomputer
1
SEMICONDUCTOR
SELECTION GUIDE
GUIDE
BOOK
IC Memory
2
Semi-Custom IC
3
Particular Purpose IC
4
General Purpose Linear IC
5
Transistor / Diode / Thyristor
6
Microwave Device / Consumer Use High Frequency Device
7
Optical Device
8
Packages
9
Index (Quick Reference by Type Number)
10
Oct. 1995

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