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2SC2958-M-AZ

Description
Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size80KB,4 Pages
ManufacturerNEC Electronics
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2SC2958-M-AZ Overview

Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon

2SC2958-M-AZ Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage140 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
DATA SHEET
SILICON TRANSISTORS
2SC2958, 2959
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
• Ideal for use of high voltage current such as TV vertical
deflection (drive and output), audio output, pin cushion
correction
• Complementary transistor with 2SA1221 and 2SA1222
V
CEO
= 140 V: 2SA1221/2SC2958
V
CEO
= 160 V: 2SA1222/2SC2959
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
160
140/160
5.0
500
1.0
1.0
150
−55
to +150
Unit
V
V
V
mA
A
W
°C
°C
* PW
10 ms, duty cycle
50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Symbol
I
CBO
I
EBO
h
FE
**
V
BE
**
V
CE(sat)
**
V
BE(sat)
**
C
ob
f
T
Conditions
V
CB
= 100 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 2.0 V, I
C
= 100 mA
V
CE
= 5.0 V, I
C
= 20 mA
I
C
= 1.0 A, I
B
= 0.2 A
I
C
= 1.0 A, I
B
= 0.2 A
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
E
=
−20
mA
30
100
0.6
150
0.64
0.32
1.1
13
60
MIN.
TYP.
MAX.
200
200
400
0.7
0.7
1.3
30
V
V
V
pF
MHz
Unit
nA
nA
** Pulse test PW
350
µ
s, duty cycle
2% per pulsed
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16150EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
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