PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
• Suitable for high-frequency oscillation
• f
T
= 25 GHz technology adopted
• 3-pin ultra super minimold
ORDERING INFORMATION
Part Number
2SC5606
2SC5606-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
15
3.3
1.5
35
115
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14658EJ2V0DS00 (2nd edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
1999, 2000
2SC5606
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Available Gain
Maximum Stable Power Gain
f
T
S
21e
2
NF
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 5 mA
–
–
50
–
–
70
200
200
100
nA
nA
–
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
–
10
–
–
–
–
21
12.5
1.2
0.21
14
15
–
–
1.5
0.3
–
–
GHz
dB
dB
pF
dB
dB
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
MAG.
MSG.
Note 3
Note 4
Note 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2 %
2.
Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
3.
MAG. =
4.
MSG. =
S
21
(k –
√
(k
2
– 1) )
S
12
S
21
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
FB
UA
50 to 100
2
Preliminary Data Sheet P14658EJ2V0DS00
2SC5606
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25
°
C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
200
Total Power Dissipation P
tot
(mW)
Mounted on Glass Epoxy Board
(1.08 cm
2
×
1.0 mm (t) )
150
115
100
50
0
0
25
50
75
100
125
150
0.1
0.1
1.0
10.0
100.0
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
40
V
CE
= 2 V
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
650
µ
A
30
450
µ
A
I
B
100
µ
A step
30
20
20
250
µ
A
10
10
I
B
= 50
µ
A
0
0
0.2
0.4
0.6
0.8
1.0
0
0
1
2
3
4
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 2 V
DC Current Gain h
FE
100
10
0.1
1.0
10.0
100.0
Collector Current I
C
(mA)
Preliminary Data Sheet P14658EJ2V0DS00
3
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