DATA SHEET
SILICON TRANSISTOR
2SD2402
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2402 is a transistor featuring high current
capacitance in small dimension.
This transistor is ideal for
DC/DC converters and motor drivers.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1571
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
Conditions
Ratings
50
30
6.0
5.0
8.0
Unit
V
V
V
A
A
Base current (DC)
Base current (pulse)
I
B(DC)
I
B(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
16 cm
2
×
0.7 mm ceramic board mounted
0.2
0.4
A
A
Total power dissipation
Junction temperature
Storage temperature
P
T
T
j
T
stg
2.0
150
−55
to +150
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16155EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SD2402
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= 50 V, I
E
= 0
V
EB
= 6.0 V, I
C
= 0
V
CE
= 1.0 V, I
C
= 1.0 A
V
CE
= 1.0 V, I
C
= 2.0 A
V
CE
= 1.0 V, I
C
= 0.1 A
I
C
= 3.0 V, I
B
= 0.15 A
I
C
= 5.0 V, I
B
= 0.25 A
I
C
= 3.0 V, I
B
= 0.15 A
V
CE
= 10 V, I
E
=
−0.5
A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
I
C
= 2.0 A, V
CC
= 10 V
I
B1
=
−I
B2
= 0.1 A
R
L
= 500
Ω
80
100
600
200
650
140
230
0.88
170
60
275
485
45
400
700
300
500
1.2
MIN.
TYP.
MAX.
100
100
Unit
nA
nA
−
−
mV
mV
mV
V
MHz
pF
ns
ns
ns
h
FE
CLASSIFICATION
Marking
h
FE2
EX
100 to 200
EY
160 to 320
EZ
200 to 400
2
Data Sheet D16155EJ2V0DS
Embedded System
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