DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ605
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SJ605
2SJ605-S
2SJ605-ZJ
2SJ605-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•
Super low on-state resistance:
R
DS(on)1
= 20 mΩ MAX. (V
GS
= –10 V, I
D
= –33 A)
R
DS(on)2
= 31 mΩ MAX. (V
GS
= –4.0 V, I
D
= –33 A)
•
Low input capacitance
!
C
iss
= 4600 pF TYP. (V
DS
= –10 V, V
GS
= 0 A)
•
Built-in gate protection diode
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
–60
m
20
m
65
m
200
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
100
1.5
150
–55 to +150
–45
203
I
AS
E
AS
!
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= –30 V, R
G
= 25
Ω,
V
GS
= –20
→
0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14650EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark
!
shows major revised points.
©
2000
2SJ605
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= –48 V
V
GS
= –10 V
I
D
= –65 A
I
F
= 65 A, V
GS
= 0 V
I
F
= 65 A, V
GS
= 0 V
di/dt = 100 A /
µ
s
TEST CONDITIONS
V
DS
= –60 V, V
GS
= 0 V
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
= –10 V, I
D
= –1 mA
V
DS
= –10 V, I
D
= –33 A
V
GS
= –10 V, I
D
= –33 A
V
GS
= –4.0 V, I
D
= –33 A
V
DS
= –10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= –30 V, I
D
= –33 A
V
GS
= –10 V
R
G
= 0
Ω
–1.5
30
–2.0
59
17
22
4600
820
330
15
14
100
58
87
15
22
1.0
53
110
20
31
MIN.
TYP.
MAX.
–10
m
10
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
!
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
–2.5
!
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
!
!
!
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG
V
GS
= –20 V
→
0 V
−
I
D
V
DD
BV
DSS
V
DS
50
Ω
L
V
DD
!
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
V
DS
(−)
90%
90%
10% 10%
V
GS
(−)
V
GS
Wave Form
90%
0
10%
I
AS
V
GS
(−)
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
=
−2
mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D14650EJ2V0DS
2SJ605
!
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
0
20
40
60
80
100
120 140
160
100
80
60
40
20
0
100
80
60
40
20
0
0
20
40
60
80
100
120 140
160
T
ch
- Channel Temperature -
˚C
T
C
- Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
–1000
I
D(pulse)
I
D
- Drain Current - A
PW
=1
–100
(o
n)
10
0
µ
0
µ
s
Lim
ite
d
I
D(DC)
Po
Lim wer
ite Dis
d
si
1m
s
–10
R
DS
10
pa
tio
n
DC
s
ms
–1
T
C
= 25˚C
Single Pulse
–1
–10
–100
–0.1
–0.1
V
DS -
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 83.3˚C/W
10
1
R
th(ch-C)
= 1.25˚C/W
0.1
Single Pulse
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14650EJ2V0DS
3
2SJ605
FORWARD TRANSFER CHARACTERISTICS
–1000
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–200
I
D
- Drain Current - A
–10
I
D
- Drain Current - A
–100
–150
V
GS
= –10 V
–1
T
A
=
−55˚C
25˚C
75˚C
125˚C
–100
–4.5 V
–50
–4.0 V
Pulsed
–0.1
–1
–2
–3
V
DS
= –10 V
Pulsed
–5
–4
0
0
–1
–2
–3
–4
–5
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
30
I
D
= –65 A
20
I
D
= –13 A
10 I
D
= –33 A
1000
100
10
T
A
= 125˚C
75˚C
25˚C
−50˚C
V
DS
= –10 V
Pulsed
–0.1
–1
–10
I
D
- Drain Current - A
–100
1
0.1
–0.01
0
0
–5
–10
–15
–20
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
Pulsed
V
GS(off)
- Gate Cut-off Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
–4.0
V
DS
= –10 V
I
D
= –1 mA
80
V
GS
= –4.0 V
–4.5 V
–10 V
–3.0
60
–2.0
40
20
–1.0
0
0
–1
–10
–100
–1000
I
D
- Drain Current - A
–50
0
50
100
150
T
ch
- Channel Temperature - ˚C
4
Data Sheet D14650EJ2V0DS
2SJ605
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–1000
I
SD
- Diode Forward Current - A
Pulsed
40
V
GS
= –4.0 V
–4.5 V
–10 V
–100
V
GS
= –10 V
–10
–4 V
0V
30
20
10
I
D
= –33A
−50
0
50
100
150
–1
0
–0.1
0
–0.5
–1.0
–1.5
–2.0
T
ch
- Channel Temperature - ˚C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
1000
V
DD
= –30 V
R
G
= 0
Ω
V
GS
= –10 V
t
d(off)
100
t
f
t
d(on)
10
t
r
V
GS
= 0 V
f = 1 MHz
10000
C
iss
1000
C
oss
C
rss
100
–0.1
–1
–10
–100
1
–0.1
–1
–10
–100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–60
V
DS
- Drain to Source Voltage - V
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
–1000
I
D
= –65 A
V
DD
= –48 V
–30 V
–12 V
V
GS
–12
V
GS
- Gate to Source Voltage - V
–50
–40
–30
–20
–10
0
–10
–8
–6
–4
I
AS
- Single Avalanche Current - A
–100
I
AS
= –45 A
E
AS
–10
V
DD
= –30 V
R
G
= 25
Ω
V
GS
= –20
→
0 V
100
µ
= 20
3m
J
V
DS
–2
0
100
0
20
40
60
80
–1
10
µ
1m
10 m
Q
G
- Gate Charge - nC
L - Inductive Load - H
Data Sheet D14650EJ2V0DS
5
京公网安备 11010802033920号
EEWORLD
