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2SJ624

Description
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-96, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size73KB,8 Pages
ManufacturerNEC Electronics
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2SJ624 Overview

Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-96, 3 PIN

2SJ624 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Parts packaging codeSC-96
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)4.5 A
Maximum drain-source on-resistance0.071 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ624
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ624 is a switching device which can be driven directly
by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.65
–0.15
+0.1
0.16
+0.1
–0.06
2.8 ±0.2
3
1.5
FEATURES
1.8 V drive available
Low on-state resistance
R
DS(on)1
= 54 mΩ MAX. (V
GS
= –4.5 V, I
D
= –2.5 A)
R
DS(on)2
= 71 mΩ MAX. (V
GS
= –2.5 V, I
D
= –2.5 A)
R
DS(on)3
= 108 mΩ MAX. (V
GS
= –1.8 V, I
D
= –1.5 A)
0 to 0.1
1
2
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
1 : Gate
2 : Source
3 : Drain
ORDERING INFORMATION
PART NUMBER
2SJ624
PACKAGE
SC-96 (Mini Mold Thin Type)
Marking: XH
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
–20
m8.0
m4.5
m18
0.2
1.25
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Protection
Diode
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Mounted on FR-4 board, t
5 sec.
Note2
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15890EJ1V0DS00 (1st edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2002
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