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2SK2366

Description
Power Field-Effect Transistor, 10A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size3MB,399 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SK2366 Overview

Power Field-Effect Transistor, 10A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

2SK2366 Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)143 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
SEMICONDUCTORS
SELECTION
GUIDE
Microcomputer 1
IC Memory 2
Semi-Custom IC 3
Particular Purpose 4
General Purpose Linear IC 5
Transistor/Diode/Thyristor 6
RF and Microwave Devices 7
Optical Device 8
Index 9
April 1999
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